component
STP9N65M2
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
main
Ray
stp9n65m2: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding)
41f5a63
1mo ago
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{
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"title": "STP9N65M2",
"brief": "STMicroelectronics MOSFETs, TO-220. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
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"component": {
"mpn": "STP9N65M2",
"manufacturer": "STMicroelectronics",
"package": "TO-220",
"pin_count": 4,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590360859022024704",
"parts": {
"symbol": "stp9n65m2.kicad_sym",
"footprint": "stp9n65m2.kicad_mod",
"model_3d": "stp9n65m2-etched.glb",
"model_3d_plain": "stp9n65m2.glb",
"model_3d_step": "stp9n65m2-etched.step",
"model_3d_step_plain": "stp9n65m2.step",
"lbr": "stp9n65m2.lbr"
},
"distributor_links": {},
"pins": [
{
"number": "1",
"name": "G",
"type": "input",
"description": "Gate. Insulated MOS control terminal; VGS(th) = 2-4 V, |VGS| max ±25 V. Zener-protected. Intrinsic gate resistance ~6.6 Ω; total gate charge Qg ≈ 10.3 nC at VGS = 0→10 V."
},
{
"number": "2",
"name": "D",
"type": "passive",
"description": "Drain. Also electrically bonded to the metal TAB of the TO-220 package. Drain-source breakdown V(BR)DSS = 650 V min; continuous ID = 5 A at TC = 25 °C, pulsed IDM = 20 A; RDS(on) ≤ 0.90 Ω at VGS = 10 V, ID = 2.5 A."
},
{
"number": "3",
"name": "S",
"type": "passive",
"description": "Source. Reference terminal for VGS and the anode of the intrinsic body diode (VSD ≈ 1.6 V at ISD = 5 A, VGS = 0). Body-diode reverse-recovery trr ≈ 276 ns at 25 °C."
},
{
"number": "TAB",
"name": "D",
"type": "passive",
"description": "Metal mounting TAB, internally shorted to the Drain (pin 2). Provides the primary thermal path (Rthj-case = 2.08 °C/W for TO-220). Insulation withstand voltage 2.5 kV RMS from leads to external heat sink."
}
],
"provenance": {
"extractor": "ds2sf",
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590360859022024704",
"pages": null,
"sha256": "a66a6196d685cbf0",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 4,
"described": 4,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "stp9n65m2.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "body on z = 0, through-hole leads below",
"extents_mm": [
10.25,
4.455,
28.525
],
"zmin_mm": -9.75,
"centre_offset_mm": 0.932,
"footprint_binding": "identity",
"sha256": "7cb065d935df5771f0ba6e48ddd180863a121af76483dad7f18e667a7b68204a",
"checked": "2026-10-07",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "stp9n65m2-etched.step",
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"seat": "body on z = 0, through-hole leads below",
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28.525
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"sha256": "b598ae0c60d73e388f4dc3a93d8b8a6b7c59d66582f7edb46e8f5b426491972f",
"checked": "2026-10-07",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "STMicroelectronics",
"Package": "TO-220",
"Category": "Transistors/Thyristors",
"Pins": "4"
}
},
"variants": [
{
"mpn": "STP9N65M2",
"kind": "packaging"
},
{
"mpn": "STP9N65M2STD9N65M2",
"kind": "packaging"
},
{
"mpn": "STP9N65M2STF9N65M2",
"kind": "packaging"
},
{
"mpn": "STP9N65M2STU9N65M2",
"kind": "packaging"
}
],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
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],
"discovery_pitch": "STP9N65M2 (STMicroelectronics) component page with datasheet-verified CAD.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
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"files": [
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"docs/hero.png",
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"visibility": {
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},
"updated_at": "2026-09-25T09:06:03.996Z"
}