# STP8NM50N-VB

**VBsemi Elec** · MOSFETs · TO-220AB

STP8NM50N-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20 V absolute maximum, with a threshold of 2.0 V to 4.0 V at ID = 250 µA. |
| 2 | D | passive | Drain; drain-source voltage is rated 500 V, with continuous drain current of 13 A at TC = 25 °C. |
| 3 | S | passive | Source; carries the drain current return, with a continuous body-diode current of 13 A and a pulsed diode current of 56 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `STP8NM50N-VB`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `stp8nm50n-vb-etched.step` / `stp8nm50n-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stp8nm50n-vb.step` / `stp8nm50n-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/stp8nm50n-vb-datasheet.pdf) (9 pp, sha256 `85cd06b26dfa3535`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stp8nm50n-vb-datasheet.pdf)