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STP80NF10FP

STMicroelectronics · MOSFETs · TO-220FP

STP80NF10FP from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with gate threshold of 2 to 4 V at ID = 250 µA.
2 D passive Drain; drain-source voltage rated 100 V, continuous current 38 A at TC = 25°C (limited by package).
3 S passive Source; main current return terminal of the N-channel MOSFET, with source-drain diode current of 38 A continuous.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220FP
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage (VGS = 0) VDS 100 V VGS = 0 3
Gate-source voltage VGS -20 20 V 3
Drain current (continuous) at TC = 25°C ID 38 A TC = 25°C; limited by package 3
Drain current (continuous) at TC = 100°C ID 27 A TC = 100°C 3
Drain current (pulsed) IDM 152 A Pulse width limited by safe operating area 3
Total dissipation at TC = 25°C PTOT 45 W TC = 25°C 3
Peak diode recovery voltage slope dv/dt 9 V/ns ISD <80A, di/dt < 300A/µs, VDD=80% V(BR)DSS 3
Single pulse avalanche energy EAS 350 mJ Starting Tj = 25°C, ID = 80A, VDD = 50V 3
Insulation withstand voltage (DC) VISO 2500 V DC 3
Storage temperature Tstg -55 175 °C 3
Operating junction temperature Tj -55 175 °C 3
Thermal resistance junction-case Rthj-case 3.33 °C/W 3
Thermal resistance junction-ambient Rthj-amb 62.5 °C/W 3
Maximum lead temperature for soldering purpose Tl 300 °C 3
Drain-source breakdown voltage V(BR)DSS 100 V ID = 250µA, VGS = 0 4
Zero gate voltage drain current (VGS = 0) IDSS 1 µA VDS = Max rating 4
Zero gate voltage drain current (VGS = 0) at 125°C IDSS 10 µA VDS = Max rating @125°C 4
Gate-body leakage current IGSS -100 100 nA VDS = 0, VGS = ±20V 4
Gate threshold voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250µA 4
Static drain-source on resistance RDS(on) 0.012 0.015 Ω VGS = 10V, ID = 40A 4
Source-drain current ISD 38 A 5
Source-drain current (pulsed) ISDM 152 A Pulse width limited by safe operating area 5
Forward on voltage VSD 1.3 V ISD = 80A, VGS = 0 5

CAD (KiCad official)

  • Symbol: STP80NF10FP
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220FP (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (12 pp, sha256 39965174d634f11e, retrieved 2026-11-06, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF