component
STP80NF10FP
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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STP80NF10FP
STMicroelectronics · MOSFETs · TO-220FP
STP80NF10FP from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with gate threshold of 2 to 4 V at ID = 250 µA. |
| 2 | D | passive | Drain; drain-source voltage rated 100 V, continuous current 38 A at TC = 25°C (limited by package). |
| 3 | S | passive | Source; main current return terminal of the N-channel MOSFET, with source-drain diode current of 38 A continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage (VGS = 0) | VDS | 100 | V | VGS = 0 | 3 | ||
| Gate-source voltage | VGS | -20 | 20 | V | 3 | ||
| Drain current (continuous) at TC = 25°C | ID | 38 | A | TC = 25°C; limited by package | 3 | ||
| Drain current (continuous) at TC = 100°C | ID | 27 | A | TC = 100°C | 3 | ||
| Drain current (pulsed) | IDM | 152 | A | Pulse width limited by safe operating area | 3 | ||
| Total dissipation at TC = 25°C | PTOT | 45 | W | TC = 25°C | 3 | ||
| Peak diode recovery voltage slope | dv/dt | 9 | V/ns | ISD <80A, di/dt < 300A/µs, VDD=80% V(BR)DSS | 3 | ||
| Single pulse avalanche energy | EAS | 350 | mJ | Starting Tj = 25°C, ID = 80A, VDD = 50V | 3 | ||
| Insulation withstand voltage (DC) | VISO | 2500 | V | DC | 3 | ||
| Storage temperature | Tstg | -55 | 175 | °C | 3 | ||
| Operating junction temperature | Tj | -55 | 175 | °C | 3 | ||
| Thermal resistance junction-case | Rthj-case | 3.33 | °C/W | 3 | |||
| Thermal resistance junction-ambient | Rthj-amb | 62.5 | °C/W | 3 | |||
| Maximum lead temperature for soldering purpose | Tl | 300 | °C | 3 | |||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | ID = 250µA, VGS = 0 | 4 | ||
| Zero gate voltage drain current (VGS = 0) | IDSS | 1 | µA | VDS = Max rating | 4 | ||
| Zero gate voltage drain current (VGS = 0) at 125°C | IDSS | 10 | µA | VDS = Max rating @125°C | 4 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS = 0, VGS = ±20V | 4 | |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250µA | 4 |
| Static drain-source on resistance | RDS(on) | 0.012 | 0.015 | Ω | VGS = 10V, ID = 40A | 4 | |
| Source-drain current | ISD | 38 | A | 5 | |||
| Source-drain current (pulsed) | ISDM | 152 | A | Pulse width limited by safe operating area | 5 | ||
| Forward on voltage | VSD | 1.3 | V | ISD = 80A, VGS = 0 | 5 |
CAD (KiCad official)
- Symbol:
STP80NF10FP - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220FP (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (12 pp, sha256
39965174d634f11e, retrieved 2026-11-06, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).