STP65N150M9

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  "title": "STP65N150M9",
  "brief": "STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "subcategory": "MOSFETs",
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        "name": "G",
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      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal, electrically connected to the metal tab (TAB); drain-source breakdown voltage is 650 V minimum (V(BR)DSS, Table 4)."
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      {
        "number": "3",
        "name": "S",
        "type": "passive",
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    "specs": {
      "Manufacturer": "STMicroelectronics",
      "Package": "TO-220",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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    "characteristics": {
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          "name": "Gate-source voltage",
          "symbol": "VGS",
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          "typ": null,
          "max": 30,
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        {
          "name": "Drain current (continuous) at TC = 25 °C",
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          "conditions": "TC = 25 °C",
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          "name": "Drain current (continuous) at TC = 100 °C",
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          "name": "Drain current (pulsed)",
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          "name": "Total power dissipation at TC = 25 °C",
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        {
          "name": "Peak diode recovery voltage slope",
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          "unit": "V/ns",
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        {
          "name": "Peak diode recovery current slope",
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        {
          "name": "Storage temperature range",
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          "min": -55,
          "typ": null,
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        },
        {
          "name": "Thermal resistance, junction-to-case",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 0.89,
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        {
          "name": "Thermal resistance, junction-to-ambient",
          "symbol": "RthJA",
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          "unit": "°C/W",
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          "max": 62.5,
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        {
          "name": "Avalanche current, repetitive or non-repetitive",
          "symbol": "IAR",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 4,
          "conditions": "Pulse width limited by TJ max.",
          "source_page": 2,
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        {
          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
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          "conditions": "Starting TJ = 25 °C, ID = IAR, VDD = 50 V",
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        {
          "name": "Drain-source breakdown voltage",
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          "kind": "electrical",
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          "min": 650,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0 V, ID = 1 mA",
          "source_page": 3,
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        },
        {
          "name": "Zero gate voltage drain current",
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          "kind": "electrical",
          "unit": "µA",
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          "conditions": "VGS = 0 V, VDS = 650 V",
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        {
          "name": "Zero gate voltage drain current at TC = 125 °C",
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          "unit": "µA",
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          "max": 200,
          "conditions": "VGS = 0 V, VDS = 650 V, TC = 125 °C (specified by design, not tested in production)",
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        {
          "name": "Gate-body leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
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          "min": -5,
          "typ": null,
          "max": 5,
          "conditions": "VDS = 0 V, VGS = ±25 V",
          "source_page": 3,
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          "name": "Gate threshold voltage",
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          "conditions": "VDS = VGS, ID = 250 µA",
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        {
          "name": "Static drain-source on-resistance",
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          "conditions": "VGS = 10 V, ID = 10 A",
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          "name": "Source-drain current (pulsed)",
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          "name": "Forward on voltage",
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          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 1.6,
          "conditions": "ISD = 20 A, VGS = 0 V (pulsed: pulse duration = 300 µs, duty cycle 1.5%)",
          "source_page": 4,
          "source": "datasheet"
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