STP46NF30 from STMicroelectronics, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal; gate-source voltage VGS is limited to ±20 V.
2	D	passive	Drain terminal, also connected to the TAB; drain-source voltage VDS is limited to 300 V and continuous drain current to 42 A at TC = 25 °C.
3	S	passive	Source terminal; source-drain diode forward current is limited to 34 A.

Key specifications

Parameter	Value
Manufacturer	STMicroelectronics
Package	TO-220-3
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-source voltage	VDS			300	V		2
Gate-source voltage	VGS	-20		20	V		2
Drain current (continuous)	ID			42	A	Drain current (continuous) at TC = 25 °C	2
Drain current (continuous)	ID			27	A	Drain current (continuous) at TC = 100 °C	2
Drain current (pulsed)	IDM			168	A	Pulse width limited by safe operating area	2
Total power dissipation	PTOT			300	W	Total power dissipation at TC = 25 °C	2
Peak diode recovery voltage slope	dv/dt			10	V/ns	ISD ≤ 34 A, di/dt ≤ 200 A/μs, VDD = 240 V, VDS (peak) < V(BR)DSS	2
Storage temperature range	Tstg	-55		175	°C		2
Avalanche current, repetitive or not-repetitive	IAR			26	A	Pulse width limited by TJ max.	2
Single pulse avalanche energy	EAS			290	mJ	Starting TJ = 25 °C, ID = IAR, VDD = 50 V	2
Thermal resistance, junction-to-case	RthJC			0.5	°C/W		2
Thermal resistance, junction-to-ambient (TO-220 column)	RthJA			62.5	°C/W		2
Drain-source breakdown voltage	V(BR)DSS	300			V	ID = 1 mA, VGS = 0 V	3
Zero gate voltage drain current	IDSS			1	µA	VGS = 0 V, VDS = 300 V	3
Zero gate voltage drain current	IDSS			10	µA	VGS = 0 V, VDS = 300 V, TC = 125 °C	3
Gate body leakage current	IGSS	-100		100	nA	VDS = 0 V, VGS = ±20 V	3
Gate threshold voltage	VGS(th)	2	3	4	V	VDS = VGS, ID = 250 µA	3
Static drain-source on-resistance	RDS(on)		71	75	mΩ	VGS = 10 V, ID = 17 A	3
Source-drain current	ISD			34	A		4
Source-drain current (pulsed)	ISDM			136	A	Pulse width limited by safe operating area	4
Forward on voltage	VSD			1.6	V	ISD = 34 A, VGS = 0 V	4
Reverse recovery time	trr			215	ns	ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V	4
Reverse recovery charge	Qrr			1.7	μC	ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V	4
Reverse recovery current	IRRM			16	A	ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V	4
Reverse recovery time	trr			252	ns	ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C	4
Reverse recovery charge	Qrr			2.3	μC	ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C	4
Reverse recovery current	IRRM			19	A	ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V, TJ = 150 °C	4

CAD (KiCad official)

Symbol: STP46NF30
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220-3 (KiCad packages3D, STEP)
3D model files: stp46nf30-etched.step / stp46nf30-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stp46nf30.step / stp46nf30.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: STMicroelectronics datasheet (20 pp, sha256 85fab183f52e403c, retrieved 2026-11-05, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

STP46NF30

Verified STP46NF30

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

README