component
STP4435
Public Made by Adomby adom
STANSON Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STP4435
STANSON Tech · MOSFETs · SOP-8
STP4435 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; internally tied to pins 2 and 3. |
| 2 | S | passive | Source of the P-channel MOSFET; internally tied to pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET; internally tied to pins 1 and 2. |
| 4 | G | input | Gate; threshold VGS(th) -1.0 V min to -3.0 V max, absolute maximum VGSS ±20 V. |
| 5 | D | passive | Drain; VDSS -30 V, continuous ID -10.0 A at TA=25℃, shorted to pins 6, 7 and 8. |
| 6 | D | passive | Drain; VDSS -30 V, continuous ID -10.0 A at TA=25℃, shorted to pins 5, 7 and 8. |
| 7 | D | passive | Drain; VDSS -30 V, continuous ID -10.0 A at TA=25℃, shorted to pins 5, 6 and 8. |
| 8 | D | passive | Drain; VDSS -30 V, continuous ID -10.0 A at TA=25℃, shorted to pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STANSON Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID=-250uA | 3 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250 uA | 3 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Zero Gate Voltage Drain Current (TJ=55℃) | IDSS | -1 | uA | TJ=55℃, VDS=-30V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | uA | VDS=-30V, VGS=0V | 3 | ||
| Drain-source On-Resistance | RDS(on) | 0.022 | 0.03 | Ω | VGS=-10V, ID=-9.2A | 3 | |
| Drain-source On-Resistance | RDS(on) | 0.028 | 0.035 | Ω | VGS=-4.5V, ID=-7.0 | 3 | |
| Forward Transconductance | gfs | 24 | S | VDS=-10V, ID=-9.0A | 3 | ||
| Diode Forward Voltage | VSD | -0.8 | -1 | V | IS=-2.0A, VGS=0V | 3 | |
| Total Gate Charge | Qg | 16 | 24 | nC | VDS=-15V, VGS=-10V, ID≡-9.A | 3 | |
| Gate-Source Charge | Qgs | 2.3 | nC | VDS=-15V, VGS=-10V, ID≡-9.A | 3 | ||
| Gate-Drain Charge | Qgd | 4.5 | nC | VDS=-15V, VGS=-10V, ID≡-9.A | 3 | ||
| Input Capacitance | Ciss | 1650 | pF | VDS=-15V, VGS=0V, f=1MHz | 3 | ||
| Output Capacitance | Coss | 350 | pF | VDS=-15V, VGS=0V, f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 235 | pF | VDS=-15V, VGS=0V, f=1MHz | 3 | ||
| Turn-On Delay Time | td(on) | 16 | 30 | nS | VDD=15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 | |
| Turn-On Rise Time | tr | 17 | 30 | nS | VDD=15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 | |
| Turn-Off Delay Time | td(off) | 65 | 110 | nS | VDD=15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 | |
| Turn-Off Fall Time | tf | 35 | 80 | nS | VDD=15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 | |
| Drain-Source Voltage | VDSS | -30 | V | Ta = 25℃ unless otherwise noted | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | Ta = 25℃ unless otherwise noted | 2 | |
| Continuous Drain Current (TJ=150℃, TA=25℃) | ID | -10 | A | TJ=150℃, TA=25℃ | 2 | ||
| Continuous Drain Current (TA=70℃) | ID | -7 | A | TA=70℃ | 2 | ||
| Pulsed Drain Current | IDM | -50 | A | 2 | |||
| Continuous Source Current (Diode Conduction) | IS | -2.3 | A | 2 | |||
| Power Dissipation (TA=25℃) | PD | 2.8 | W | TA=25℃ | 2 | ||
| Power Dissipation (TA=70℃) | PD | 1.8 | W | TA=70℃ | 2 | ||
| Operation Junction Temperature | TJ | -55 | 150 | ℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 70 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
STP4435 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
stp4435-etched.step/stp4435-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp4435.step/stp4435.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STANSON Tech datasheet (6 pp, sha256
257ab5a7393dfea7, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STP4435
**STANSON Tech** · MOSFETs · SOP-8
STP4435 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; internally tied to pins 2 and 3. |
| 2 | S | passive | Source of the P-channel MOSFET; internally tied to pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET; internally tied to pins 1 and 2. |
| 4 | G | input | Gate; threshold VGS(th) -1.0 V min to -3.0 V max, absolute maximum VGSS ±20 V. |
| 5 | D | passive | Drain; VDSS -30 V, continuous ID -10.0 A at TA=25℃, shorted to pins 6, 7 and 8. |
| 6 | D | passive | Drain; VDSS -30 V, continuous ID -10.0 A at TA=25℃, shorted to pins 5, 7 and 8. |
| 7 | D | passive | Drain; VDSS -30 V, continuous ID -10.0 A at TA=25℃, shorted to pins 5, 6 and 8. |
| 8 | D | passive | Drain; VDSS -30 V, continuous ID -10.0 A at TA=25℃, shorted to pins 5, 6 and 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STANSON Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | | | V | VGS=0V, ID=-250uA | 3 |
| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS=VGS, ID=-250 uA | 3 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 3 |
| Zero Gate Voltage Drain Current (TJ=55℃) | IDSS | | | -1 | uA | TJ=55℃, VDS=-30V, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS | | | -5 | uA | VDS=-30V, VGS=0V | 3 |
| Drain-source On-Resistance | RDS(on) | | 0.022 | 0.03 | Ω | VGS=-10V, ID=-9.2A | 3 |
| Drain-source On-Resistance | RDS(on) | | 0.028 | 0.035 | Ω | VGS=-4.5V, ID=-7.0 | 3 |
| Forward Transconductance | gfs | | 24 | | S | VDS=-10V, ID=-9.0A | 3 |
| Diode Forward Voltage | VSD | | -0.8 | -1 | V | IS=-2.0A, VGS=0V | 3 |
| Total Gate Charge | Qg | | 16 | 24 | nC | VDS=-15V, VGS=-10V, ID≡-9.A | 3 |
| Gate-Source Charge | Qgs | | 2.3 | | nC | VDS=-15V, VGS=-10V, ID≡-9.A | 3 |
| Gate-Drain Charge | Qgd | | 4.5 | | nC | VDS=-15V, VGS=-10V, ID≡-9.A | 3 |
| Input Capacitance | Ciss | | 1650 | | pF | VDS=-15V, VGS=0V, f=1MHz | 3 |
| Output Capacitance | Coss | | 350 | | pF | VDS=-15V, VGS=0V, f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 235 | | pF | VDS=-15V, VGS=0V, f=1MHz | 3 |
| Turn-On Delay Time | td(on) | | 16 | 30 | nS | VDD=15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 |
| Turn-On Rise Time | tr | | 17 | 30 | nS | VDD=15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 |
| Turn-Off Delay Time | td(off) | | 65 | 110 | nS | VDD=15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 |
| Turn-Off Fall Time | tf | | 35 | 80 | nS | VDD=15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=6Ω | 3 |
| Drain-Source Voltage | VDSS | | -30 | | V | Ta = 25℃ unless otherwise noted | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | Ta = 25℃ unless otherwise noted | 2 |
| Continuous Drain Current (TJ=150℃, TA=25℃) | ID | | -10 | | A | TJ=150℃, TA=25℃ | 2 |
| Continuous Drain Current (TA=70℃) | ID | | -7 | | A | TA=70℃ | 2 |
| Pulsed Drain Current | IDM | | -50 | | A | | 2 |
| Continuous Source Current (Diode Conduction) | IS | | -2.3 | | A | | 2 |
| Power Dissipation (TA=25℃) | PD | | 2.8 | | W | TA=25℃ | 2 |
| Power Dissipation (TA=70℃) | PD | | 1.8 | | W | TA=70℃ | 2 |
| Operation Junction Temperature | TJ | -55 | | 150 | ℃ | | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | 70 | | ℃/W | | 2 |
## CAD (KiCad official)
- Symbol: `STP4435`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `stp4435-etched.step` / `stp4435-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stp4435.step` / `stp4435.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STANSON Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588907494076780544) (6 pp, sha256 `257ab5a7393dfea7`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stp4435-datasheet.pdf)