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STP4407

STANSON Tech · MOSFETs · SOP-8

STP4407 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied internally with pins 2 and 3; VDSS is -30V.
2 S passive Source of the P-channel MOSFET, tied internally with pins 1 and 3; continuous drain current is -10A at TA=25℃.
3 S passive Source of the P-channel MOSFET, tied internally with pins 1 and 2; continuous source current (diode conduction) is -20A.
4 G input Gate of the P-channel MOSFET with a gate-source voltage limit of ±20V and a threshold of -1.0V min to -2.5V max.
5 D passive Drain of the P-channel MOSFET, tied internally with pins 6, 7 and 8; VDSS is -30V.
6 D passive Drain of the P-channel MOSFET, tied internally with pins 5, 7 and 8; pulsed drain current is -50A.
7 D passive Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 8; RDS(on) is 15mΩ typ at VGS=-10V, ID=-10A.
8 D passive Drain of the P-channel MOSFET, tied internally with pins 5, 6 and 7; RDS(on) is 24mΩ typ at VGS=-4.5V, ID=-6.0A.

Key specifications

Parameter Value
Manufacturer STANSON Tech
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID=-250uA 3
Gate Threshold Voltage VGS(th) -2.5 -1 V VDS=VGS, ID=-250uA 3
Gate Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Zero Gate Voltage Drain Current (TJ=55℃) IDSS -1 uA TJ=55℃, VDS=-30V, VGS=0V 3
Zero Gate Voltage Drain Current IDSS -5 uA VDS=-30V, VGS=0V 3
Drain-source On-Resistance RDS(on) 15 20 mΩ VGS=-10V, ID=-10A 3
Drain-source On-Resistance RDS(on) 24 32 mΩ VGS=-4.5V, ID=-6.0A 3
Diode Forward Voltage VSD -1 V IS=-1.0A, VGS=0V 3
Input Capacitance Ciss 2076 2500 pF VDS=-15V, VGS=0V, f=1MHz 3
Forward Transconductance gfs 26 S VDS=-5V, ID=-10A 3
Output Capacitance Coss 400 pF VDS=-15V, VGS=0V, f=1MHz 3
Reverse Transfer Capacitance Crss 302 pF VDS=-15V, VGS=0V, f=1MHz 3
Total Gate Charge Qg 30 nC VDS=-15V, VGS=0V, f=1MHz 3
Gate-Source Charge Qgs 4.3 nC VDS=-15V, VGS=0V, f=1MHz 3
Gate-Drain Charge Qgd 10 nC VDS=-15V, VGS=0V, f=1MHz 3
Turn-On Delay Time td(on) 10.4 nS VDD=15V, RL=1.25Ω, ID=-1A, VGEN=-10V, RG=3Ω 3
Turn-On Rise Time tr 24 nS VDD=15V, RL=1.25Ω, ID=-1A, VGEN=-10V, RG=3Ω 3
Turn-Off Delay Time td(off) 12.6 nS VDD=15V, RL=1.25Ω, ID=-1A, VGEN=-10V, RG=3Ω 3
Turn-Off Fall Time tf 12 nS VDD=15V, RL=1.25Ω, ID=-1A, VGEN=-10V, RG=3Ω 3
Drain-Source Voltage VDSS -30 V Ta=25℃ 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current (TJ=150℃) ID -10 A TA=25℃ 2
Continuous Drain Current (TJ=150℃) ID -6 A TA=70℃ 2
Pulsed Drain Current IDM -50 A 2
Continuous Source Current (Diode Conduction) IS -20 A 2
Power Dissipation PD 2.5 W TA=25℃ 2
Power Dissipation PD 2 W TA=70℃ 2
Operation Junction Temperature TJ -55 150 ℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Thermal Resistance Junction to Ambient RθJA 50 ℃/W 2

CAD (KiCad official)

  • Symbol: STP4407
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: stp4407-etched.step / stp4407-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stp4407.step / stp4407.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STANSON Tech datasheet (6 pp, sha256 919d84cdcad52906, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF