component
STP4403
Public Made by Adomby adom
STANSON Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STP4403
STANSON Tech · MOSFETs · SOP-8
STP4403 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied to pins 2 and 3; drain-source voltage rated -20 V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 3; continuous source (diode) current is -2.3 A. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 2; connects to the body diode anode side. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage rated ±12 V with threshold of -0.35 V to -0.9 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied to pins 6, 7 and 8; continuous drain current -10.0 A at TA=25℃. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 7 and 8; pulsed drain current -30 A. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 8; RDS(on) 30 mΩ max at VGS=-4.5 V. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 7; drain-source breakdown voltage -20 V min. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STANSON Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGSS | -12 | 12 | V | 2 | ||
| Operation Junction Temperature | TJ | -55 | 150 | ℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Gate Threshold Voltage | VGS(th) | -0.35 | -0.9 | V | VDS=VGS,ID=-250uA | 3 | |
| Drain-source On-Resistance | RDS(on) | 22 | 27 | mΩ | VGS=-4.5V,ID=-10A | 3 | |
| Drain-source On-Resistance | RDS(on) | 32 | 35 | mΩ | VGS=-2.5V,ID=-8.6A | 3 | |
| Drain-source On-Resistance | RDS(on) | 43 | 48 | mΩ | VGS=-1.8V,ID=-7.6A | 3 | |
| Diode Forward Voltage | VSD | -0.8 | -1.2 | V | IS=-2.5A,VGS=0V | 3 | |
| Total Gate Charge | Qg | 30 | 45 | nC | VDS=-10V,VGS=-5V ID≡-10.0A | 3 | |
| Turn-On Time (delay) | td(on) | 25 | 40 | nS | VDD=-10V,RL=15Ω ID=-1A,VGEN=-4.5V RG=6Ω | 3 | |
| Turn-On Time (rise) | tr | 45 | 70 | nS | VDD=-10V,RL=15Ω ID=-1A,VGEN=-4.5V RG=6Ω | 3 | |
| Turn-Off Time (delay) | td(off) | 145 | 240 | nS | VDD=-10V,RL=15Ω ID=-1A,VGEN=-4.5V RG=6Ω | 3 | |
| Turn-Off Time (fall) | tf | 70 | 115 | nS | VDD=-10V,RL=15Ω ID=-1A,VGEN=-4.5V RG=6Ω | 3 | |
| Drain-Source Voltage | VDSS | -20 | V | 2 | |||
| Continuous Drain Current | ID | -10 | A | TJ=150℃, TA=25℃ | 2 | ||
| Continuous Drain Current | ID | -8 | A | TJ=150℃, TA=70℃ | 2 | ||
| Pulsed Drain Current | IDM | -30 | A | 2 | |||
| Continuous Source Current (Diode Conduction) | IS | -2.3 | A | 2 | |||
| Power Dissipation | PD | 2.8 | W | TA=25℃ | 2 | ||
| Power Dissipation | PD | 1.8 | W | TA=70℃ | 2 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 70 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -20 | V | VGS=0V,ID=-250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VDS=-16V,VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current (TJ=55℃) | IDSS | -10 | uA | VDS=-20V,VGS=0V TJ=55℃ | 3 | ||
| On-State Drain Current | ID(on) | -20 | A | VDS=-5V,VGS=-4.5V | 3 | ||
| Forward Transconductance | gfs | 36 | S | VDS=-5.0V,ID=-10A | 3 | ||
| Gate-Source Charge | Qgs | 4.5 | nC | VDS=-10V,VGS=-5V ID≡-10.0A | 3 | ||
| Gate-Drain Charge | Qgd | 8 | nC | VDS=-10V,VGS=-5V ID≡-10.0A | 3 | ||
| Input Capacitance | Ciss | 2670 | pF | VDS=-10V,VGS=0V f=1MHz | 3 | ||
| Output Capacitance | Coss | 520 | pF | VDS=-10V,VGS=0V f=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 480 | pF | VDS=-10V,VGS=0V f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
STP4403 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
stp4403-etched.step/stp4403-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp4403.step/stp4403.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STANSON Tech datasheet (6 pp, sha256
e0f261b0bd7cd4ff, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STP4403
**STANSON Tech** · MOSFETs · SOP-8
STP4403 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied to pins 2 and 3; drain-source voltage rated -20 V. |
| 2 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 3; continuous source (diode) current is -2.3 A. |
| 3 | S | passive | Source of the P-channel MOSFET, tied to pins 1 and 2; connects to the body diode anode side. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage rated ±12 V with threshold of -0.35 V to -0.9 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, tied to pins 6, 7 and 8; continuous drain current -10.0 A at TA=25℃. |
| 6 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 7 and 8; pulsed drain current -30 A. |
| 7 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 8; RDS(on) 30 mΩ max at VGS=-4.5 V. |
| 8 | D | passive | Drain of the P-channel MOSFET, tied to pins 5, 6 and 7; drain-source breakdown voltage -20 V min. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STANSON Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGSS | -12 | | 12 | V | | 2 |
| Operation Junction Temperature | TJ | -55 | | 150 | ℃ | | 2 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 2 |
| Gate Threshold Voltage | VGS(th) | | -0.35 | -0.9 | V | VDS=VGS,ID=-250uA | 3 |
| Drain-source On-Resistance | RDS(on) | | 22 | 27 | mΩ | VGS=-4.5V,ID=-10A | 3 |
| Drain-source On-Resistance | RDS(on) | | 32 | 35 | mΩ | VGS=-2.5V,ID=-8.6A | 3 |
| Drain-source On-Resistance | RDS(on) | | 43 | 48 | mΩ | VGS=-1.8V,ID=-7.6A | 3 |
| Diode Forward Voltage | VSD | | -0.8 | -1.2 | V | IS=-2.5A,VGS=0V | 3 |
| Total Gate Charge | Qg | | 30 | 45 | nC | VDS=-10V,VGS=-5V ID≡-10.0A | 3 |
| Turn-On Time (delay) | td(on) | | 25 | 40 | nS | VDD=-10V,RL=15Ω ID=-1A,VGEN=-4.5V RG=6Ω | 3 |
| Turn-On Time (rise) | tr | | 45 | 70 | nS | VDD=-10V,RL=15Ω ID=-1A,VGEN=-4.5V RG=6Ω | 3 |
| Turn-Off Time (delay) | td(off) | | 145 | 240 | nS | VDD=-10V,RL=15Ω ID=-1A,VGEN=-4.5V RG=6Ω | 3 |
| Turn-Off Time (fall) | tf | | 70 | 115 | nS | VDD=-10V,RL=15Ω ID=-1A,VGEN=-4.5V RG=6Ω | 3 |
| Drain-Source Voltage | VDSS | | -20 | | V | | 2 |
| Continuous Drain Current | ID | | -10 | | A | TJ=150℃, TA=25℃ | 2 |
| Continuous Drain Current | ID | | -8 | | A | TJ=150℃, TA=70℃ | 2 |
| Pulsed Drain Current | IDM | | -30 | | A | | 2 |
| Continuous Source Current (Diode Conduction) | IS | | -2.3 | | A | | 2 |
| Power Dissipation | PD | | 2.8 | | W | TA=25℃ | 2 |
| Power Dissipation | PD | | 1.8 | | W | TA=70℃ | 2 |
| Thermal Resistance-Junction to Ambient | RθJA | | 70 | | ℃/W | | 2 |
| Drain-Source Breakdown Voltage | V(BR)DSS | | -20 | | V | VGS=0V,ID=-250uA | 3 |
| Zero Gate Voltage Drain Current | IDSS | | -1 | | uA | VDS=-16V,VGS=0V | 3 |
| Zero Gate Voltage Drain Current (TJ=55℃) | IDSS | | -10 | | uA | VDS=-20V,VGS=0V TJ=55℃ | 3 |
| On-State Drain Current | ID(on) | | -20 | | A | VDS=-5V,VGS=-4.5V | 3 |
| Forward Transconductance | gfs | | 36 | | S | VDS=-5.0V,ID=-10A | 3 |
| Gate-Source Charge | Qgs | | 4.5 | | nC | VDS=-10V,VGS=-5V ID≡-10.0A | 3 |
| Gate-Drain Charge | Qgd | | 8 | | nC | VDS=-10V,VGS=-5V ID≡-10.0A | 3 |
| Input Capacitance | Ciss | | 2670 | | pF | VDS=-10V,VGS=0V f=1MHz | 3 |
| Output Capacitance | Coss | | 520 | | pF | VDS=-10V,VGS=0V f=1MHz | 3 |
| Reverse Transfer Capacitance | Crss | | 480 | | pF | VDS=-10V,VGS=0V f=1MHz | 3 |
## CAD (KiCad official)
- Symbol: `STP4403`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `stp4403-etched.step` / `stp4403-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stp4403.step` / `stp4403.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STANSON Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588911297769037824) (6 pp, sha256 `e0f261b0bd7cd4ff`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stp4403-datasheet.pdf)