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STP42N60M2-EP

STMicroelectronics · MOSFETs · TO-220

STP42N60M2-EP from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage VGS is rated ±25 V (absolute maximum).
2 D passive Drain terminal, electrically connected to the tab; drain-source voltage VDS is rated 600 V and continuous drain current is 34 A at TC = 25 °C.
3 S passive Source terminal; the source-drain diode is rated for 34 A continuous and 136 A pulsed current.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 600 V 2
Gate-source voltage VGS -25 25 V 2
Drain current (continuous) at TC = 25 °C ID 34 A TC = 25 °C 2
Drain current (continuous) at TC = 100 °C ID 22 A TC = 100 °C 2
Drain current (pulsed) IDM 136 A Pulse width limited by safe operating area 2
Total power dissipation at TC = 25 °C PTOT 250 W TC = 25 °C 2
Peak diode recovery voltage slope dv/dt 15 V/ns ISD ≤ 34 A, di/dt ≤ 400 A/μs, VDS (peak) < V(BR)DSS, VDD = 400 V 2
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDD = 480 V 2
Storage temperature range Tstg -55 150 °C 2
Avalanche current, repetitive or not-repetitive IAR 6 A Pulse width limited by TJ max. 2
Single pulse avalanche energy EAS 800 mJ Starting TJ = 25 °C, ID = IAR, VDD = 50 V 2
Drain-source breakdown voltage V(BR)DSS 600 V ID = 1 mA, VGS = 0 V 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 600 V 3
Zero gate voltage drain current IDSS 100 µA VGS = 0 V, VDS = 600 V, TC = 125 °C 3
Gate body leakage current IGSS -10 10 µA VDS = 0 V, VGS = ±25 V 3
Gate threshold voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250 µA 3
Static drain-source on-resistance RDS(on) 76 87 mΩ VGS = 10 V, ID = 17 A 3
Source-drain current ISD 34 A 4
Source-drain current (pulsed) ISDM 136 A 4
Forward on voltage VSD 1.6 V ISD = 34 A, VGS = 0 V 4
Thermal resistance, junction-to-case RthJC 0.5 °C/W 2
Thermal resistance, junction-to-ambient (TO-220) RthJA 62.5 °C/W 2

CAD (KiCad official)

  • Symbol: STP42N60M2-EP
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: stp42n60m2-ep-etched.step / stp42n60m2-ep-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stp42n60m2-ep.step / stp42n60m2-ep.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (20 pp, sha256 4ef6b9e4c240087c, retrieved 2026-10-11, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF