STP40NF20-VB

{
  "slug": "stp40nf20-vb",
  "version": "0.1.0",
  "type": "component",
  "description": "VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
    "component",
    "transistors-thyristors",
    "stp40nf20-vb",
    "factory-2.0.0",
    "extractor-text"
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  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
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    "README.md",
    "stp40nf20-vb.kicad_sym",
    "stp40nf20-vb.kicad_mod",
    "stp40nf20-vb.glb",
    "stp40nf20-vb.step",
    "stp40nf20-vb.lbr",
    "docs/hero.png",
    "docs/stp40nf20-vb-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "stp40nf20-vb-hero.glb",
    "stp40nf20-vb-hero.overlay.json",
    "stp40nf20-vb-etched.glb"
  ],
  "component": {
    "mpn": "STP40NF20-VB",
    "manufacturer": "VBsemi Elec",
    "package": "TO-220AB",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/ea03293f4151872a223af3d320ac74d1.pdf",
    "parts": {
      "symbol": "stp40nf20-vb.kicad_sym",
      "footprint": "stp40nf20-vb.kicad_mod",
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      "model_3d_step": "stp40nf20-vb-etched.step",
      "model_3d_step_plain": "stp40nf20-vb.step",
      "lbr": "stp40nf20-vb.lbr"
    },
    "distributor_links": {
      "lcsc": "C7463572"
    },
    "distributor_check": {
      "checked_at": "2026-10-29T02:56:17Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate of the N-channel MOSFET, with gate-source voltage rated at ±25 V (absolute maximum), and VGS of 10 V used for the stated RDS(on) of 0.048 Ω at 3 A."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, rated for 200 V drain-source voltage and 50 A continuous drain current at TC = 25 °C, with junction and storage temperature range of -55 to 175 °C."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, serving as the reference for gate-source voltage and the source-drain diode, with a pulsed source current (ISM) of 36 A."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet gives only the TO-220AB top-view label 'GDS' with no printed pin numbers. Pin numbers ; Pin types are not stated in the datasheet. Types were assigned from the MOSFET terminal roles: G as ; The mounting tab (drain on the standard TO-220AB) is not labeled or numbered in the extracted text, "
        ],
        "pages_sent": 6,
        "cost_usd": 0.0315,
        "at": "2026-10-29T02:56:06"
      },
      "datasheet": {
        "url": "https://datasheet.lcsc.com/datasheet/pdf/ea03293f4151872a223af3d320ac74d1.pdf",
        "pages": 6,
        "sha256": "5533c1a6c047de9b",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
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        "units": "mm",
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        "seat": "body on z = 0, through-hole leads below",
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        "zmin_mm": -9.75,
        "centre_offset_mm": 0.932,
        "footprint_binding": "identity",
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        "checked": "2026-10-29",
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      },
      {
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}