component
STP40NF20-VB
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VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STP40NF20-VB
VBsemi Elec · MOSFETs · TO-220AB
STP40NF20-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with gate-source voltage rated at ±25 V (absolute maximum), and VGS of 10 V used for the stated RDS(on) of 0.048 Ω at 3 A. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for 200 V drain-source voltage and 50 A continuous drain current at TC = 25 °C, with junction and storage temperature range of -55 to 175 °C. |
| 3 | S | passive | Source of the N-channel MOSFET, serving as the reference for gate-source voltage and the source-drain diode, with a pulsed source current (ISM) of 36 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V | 1 | |||
| Gate-Source Voltage | VGS | -25 | 25 | V | 1 | ||
| Continuous Drain Current | ID | 50 | A | TJ = 175 °C, TC = 25 °C | 1 | ||
| Pulsed Drain Current | IDM | 150 | A | 1 | |||
| Single Pulse Avalanche Current | IAS | 20 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 20 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 166 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 3.12 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 40 | °C/W | PCB mount, 1 in square FR-4 PCB | 1 | ||
| Junction-to-Case (Drain) Thermal Resistance | RthJC | 0.75 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | VDS | 200 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 200 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 200 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 200 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| Gate Resistance | Rg | 0.5 | 2.9 | Ω | 2 | ||
| Rise Time | tr | 50 | 75 | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 30 | 45 | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Fall Time | tf | 60 | 90 | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Pulsed Current | ISM | 36 | A | 2 | |||
| Diode Forward Voltage | VSD | 0.9 | 1.5 | V | IF = 3 A, VGS = 0 V | 2 | |
| Source-Drain Reverse Recovery Time | trr | 180 | 250 | ns | IF = 3 A, dI/dt = 100 A/µs | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.048 | Ω | VGS = 10 V, ID = 3 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.07 | Ω | VGS = 10 V, ID = 3 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.092 | Ω | VGS = 6 V, ID = 3 A | 2 | ||
| On-State Drain Current | ID(on) | 40 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| Forward Transconductance | gfs | 35 | S | VDS = 15 V, ID = 3 A | 2 | ||
| Output Capacitance | Coss | 180 | pF | VGS = 0 V, VDS = 25 V, F = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 80 | pF | VGS = 0 V, VDS = 25 V, F = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 8 | nC | VDS = 100 V, VGS = 10 V, ID = 3 A | 2 | ||
| Gate-Drain Charge | Qgd | 12 | nC | VDS = 100 V, VGS = 10 V, ID = 3 A | 2 | ||
| Turn-On Delay Time | td(on) | 15 | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
CAD (KiCad official)
- Symbol:
STP40NF20-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
stp40nf20-vb-etched.step/stp40nf20-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp40nf20-vb.step/stp40nf20-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (6 pp, sha256
5533c1a6c047de9b, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STP40NF20-VB
**VBsemi Elec** · MOSFETs · TO-220AB
STP40NF20-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with gate-source voltage rated at ±25 V (absolute maximum), and VGS of 10 V used for the stated RDS(on) of 0.048 Ω at 3 A. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for 200 V drain-source voltage and 50 A continuous drain current at TC = 25 °C, with junction and storage temperature range of -55 to 175 °C. |
| 3 | S | passive | Source of the N-channel MOSFET, serving as the reference for gate-source voltage and the source-drain diode, with a pulsed source current (ISM) of 36 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 200 | V | | 1 |
| Gate-Source Voltage | VGS | -25 | | 25 | V | | 1 |
| Continuous Drain Current | ID | | | 50 | A | TJ = 175 °C, TC = 25 °C | 1 |
| Pulsed Drain Current | IDM | | | 150 | A | | 1 |
| Single Pulse Avalanche Current | IAS | | | 20 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS | | | 20 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 166 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 3.12 | W | TA = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance | RthJA | | | 40 | °C/W | PCB mount, 1 in square FR-4 PCB | 1 |
| Junction-to-Case (Drain) Thermal Resistance | RthJC | | | 0.75 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | VDS | 200 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 200 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 50 | µA | VDS = 200 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 250 | µA | VDS = 200 V, VGS = 0 V, TJ = 175 °C | 2 |
| Gate Resistance | Rg | | 0.5 | 2.9 | Ω | | 2 |
| Rise Time | tr | | 50 | 75 | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 30 | 45 | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Fall Time | tf | | 60 | 90 | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Pulsed Current | ISM | | | 36 | A | | 2 |
| Diode Forward Voltage | VSD | | 0.9 | 1.5 | V | IF = 3 A, VGS = 0 V | 2 |
| Source-Drain Reverse Recovery Time | trr | | 180 | 250 | ns | IF = 3 A, dI/dt = 100 A/µs | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.048 | | Ω | VGS = 10 V, ID = 3 A | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.07 | | Ω | VGS = 10 V, ID = 3 A, TJ = 175 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.092 | | Ω | VGS = 6 V, ID = 3 A | 2 |
| On-State Drain Current | ID(on) | | 40 | | A | VDS = 5 V, VGS = 10 V | 2 |
| Forward Transconductance | gfs | | 35 | | S | VDS = 15 V, ID = 3 A | 2 |
| Output Capacitance | Coss | | 180 | | pF | VGS = 0 V, VDS = 25 V, F = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 80 | | pF | VGS = 0 V, VDS = 25 V, F = 1 MHz | 2 |
| Gate-Source Charge | Qgs | | 8 | | nC | VDS = 100 V, VGS = 10 V, ID = 3 A | 2 |
| Gate-Drain Charge | Qgd | | 12 | | nC | VDS = 100 V, VGS = 10 V, ID = 3 A | 2 |
| Turn-On Delay Time | td(on) | | 15 | | ns | VDD = 100 V, RL = 5.2 Ω, ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
## CAD (KiCad official)
- Symbol: `STP40NF20-VB`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `stp40nf20-vb-etched.step` / `stp40nf20-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stp40nf20-vb.step` / `stp40nf20-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/stp40nf20-vb-datasheet.pdf) (6 pp, sha256 `5533c1a6c047de9b`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stp40nf20-vb-datasheet.pdf)