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STP33N60M6-VB
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VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STP33N60M6-VB
VBsemi Elec · MOSFETs · TO-220AB
STP33N60M6-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±30 V maximum, with threshold VGS(th) of 2.5 V to 4.5 V at ID = 250 μA. |
| 2 | D | passive | Drain (also the case/tab, per RthJC 'Junction-to-Case (Drain)'); VDS is rated 600 V and continuous ID is 25 A at TC = 25 °C. |
| 3 | S | passive | Source; continuous body-diode current IS is 25 A and pulsed ISM is 75 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 600 | V | VGS = 0 V, ID = 1 mA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = ± 20 V | 2 | ||
| Gate-Source Leakage | IGSS | 1 | μA | VGS = ± 30 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 600 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Continuous Source-Drain Diode Current | IS | 25 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 75 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.5 | V | TJ = 25 °C, IS = 8 A, VGS = 0 V | 2 | ||
| Drain-Source Voltage | VDS | 600 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | 25 | A | TJ = 150 °C, VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 15 | A | TJ = 150 °C, VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 75 | A | 1 | |||
| Linear Derating Factor | 1.67 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 870 | mJ | VDD = 100 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 21 A | 1 | ||
| Maximum Power Dissipation | PD | 130 | W | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Drain-Source Voltage Slope | dV/dt | 50 | V/ns | TJ = 125 °C | 1 | ||
| Reverse Diode dV/dt | dV/dt | 15 | V/ns | ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 260 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | -62 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | -0.7 | °C/W | 2 | |||
| VDS Temperature Coefficient | ΔVDS/TJ | 0.7 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.12 | Ω | VGS = 10 V, ID = 8 A | 2 | ||
| Forward Transconductance | gfs | 5.6 | S | VDS = 30 V, ID = 8 A | 2 | ||
| Input Capacitance | Ciss | 2800 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 80 | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 | ||
| Total Gate Charge | Qg | 38 | nC | VGS = 10 V, ID = 8 A, VDS = 520 V | 2 | ||
| Turn-Off Delay Time | td(off) | 80 | ns | VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω | 2 | ||
| Fall Time | tf | 12 | ns | VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω | 2 |
CAD (KiCad official)
- Symbol:
STP33N60M6-VB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
stp33n60m6-vb-etched.step/stp33n60m6-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp33n60m6-vb.step/stp33n60m6-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (7 pp, sha256
0ece8c94ae4f7ffa, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STP33N60M6-VB
**VBsemi Elec** · MOSFETs · TO-220AB
STP33N60M6-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±30 V maximum, with threshold VGS(th) of 2.5 V to 4.5 V at ID = 250 μA. |
| 2 | D | passive | Drain (also the case/tab, per RthJC 'Junction-to-Case (Drain)'); VDS is rated 600 V and continuous ID is 25 A at TC = 25 °C. |
| 3 | S | passive | Source; continuous body-diode current IS is 25 A and pulsed ISM is 75 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220AB |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 600 | | | V | VGS = 0 V, ID = 1 mA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2.5 | | 4.5 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | | | 100 | nA | VGS = ± 20 V | 2 |
| Gate-Source Leakage | IGSS | | | 1 | μA | VGS = ± 30 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS = 600 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 100 | μA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 |
| Continuous Source-Drain Diode Current | IS | | | 25 | A | | 2 |
| Pulsed Diode Forward Current | ISM | | | 75 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.5 | V | TJ = 25 °C, IS = 8 A, VGS = 0 V | 2 |
| Drain-Source Voltage | VDS | | | 600 | V | TC = 25 °C | 1 |
| Gate-Source Voltage | VGS | -30 | | 30 | V | TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 25 | A | TJ = 150 °C, VGS at 10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID | | | 15 | A | TJ = 150 °C, VGS at 10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | 75 | A | | 1 |
| Linear Derating Factor | | | | 1.67 | W/°C | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 870 | mJ | VDD = 100 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 21 A | 1 |
| Maximum Power Dissipation | PD | | | 130 | W | TC = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Drain-Source Voltage Slope | dV/dt | | | 50 | V/ns | TJ = 125 °C | 1 |
| Reverse Diode dV/dt | dV/dt | | | 15 | V/ns | ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C | 1 |
| Soldering Recommendations (Peak Temperature) | | | | 260 | °C | for 10 s, 1.6 mm from case | 1 |
| Maximum Junction-to-Ambient | RthJA | | | -62 | °C/W | | 2 |
| Maximum Junction-to-Case (Drain) | RthJC | | | -0.7 | °C/W | | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ | | 0.7 | | V/°C | Reference to 25 °C, ID = 1 mA | 2 |
| Drain-Source On-State Resistance | RDS(on) | | 0.12 | | Ω | VGS = 10 V, ID = 8 A | 2 |
| Forward Transconductance | gfs | | 5.6 | | S | VDS = 30 V, ID = 8 A | 2 |
| Input Capacitance | Ciss | | 2800 | | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 80 | | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg | | 38 | | nC | VGS = 10 V, ID = 8 A, VDS = 520 V | 2 |
| Turn-Off Delay Time | td(off) | | 80 | | ns | VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω | 2 |
| Fall Time | tf | | 12 | | ns | VDD = 520 V, ID = 8 A, VGS = 10 V, Rg = 9.1 Ω | 2 |
## CAD (KiCad official)
- Symbol: `STP33N60M6-VB`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `stp33n60m6-vb-etched.step` / `stp33n60m6-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stp33n60m6-vb.step` / `stp33n60m6-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/stp33n60m6-vb-datasheet.pdf) (7 pp, sha256 `0ece8c94ae4f7ffa`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stp33n60m6-vb-datasheet.pdf)