component

STP12NK80Z

Public Made by Adom

by adom

STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstp12nk80zfactory-2.0.0extractor-text

Verified STP12NK80Z

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: STP12NK80Z · TO-220 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 22-page datasheet
  • ✓distributor: lcsc C5887433, digikey 497-6737-5-ND, mouser 511-STP12NK80Z
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-m2ne7e8u/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ stp12nk80z.kicad_sym✓ stp12nk80z.kicad_mod✓ stp12nk80z.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

STP12NK80Z

STMicroelectronics · MOSFETs · TO-220

STP12NK80Z from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the Zener-protected N-channel MOSFET, with gate-source voltage rated ±30 V in Table 1.
2 D passive Drain terminal, rated 800 V drain-source voltage and 10.5 A continuous drain current at TC = 25 °C.
3 S passive Source terminal, with source-drain diode continuous current rated at 10.5 A in Table 7.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 800 V ID = 1 mA, VGS = 0 V 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 800 V 3
Zero gate voltage drain current at TC = 125 °C IDSS 50 µA VGS = 0 V, VDS = 800 V, TC = 125 °C 3
Gate body leakage current IGSS -10 10 µA VGS = ±20 V, VDS = 0 V 3
Gate threshold voltage VGS(th) 3 3.75 4.5 V VDS = VGS, ID = 100 µA 3
Static drain-source on-resistance RDS(on) 585 750 mΩ VGS = 10 V, ID = 5.25 A 3
Forward on voltage VSD 1.6 V ISD = 10.5 A, VGS = 0 V 4
Source-drain current ISD 10.5 A 4
Source-drain current (pulsed) ISDM 42 A 4
Drain-source voltage VDS 800 V 2
Gate-source voltage VGS -30 30 V 2
Drain current (continuous) ID 10.5 A TC = 25 °C 2
Drain current (continuous) ID 6.6 A TC = 100 °C 2
Drain current (pulsed) IDM 42 A 2
Total power dissipation PTOT 190 W TC = 25 °C 2
Gate-source human body model ESD ESD 4 kV C = 100 pF, R = 1.5 kΩ 2
Peak diode recovery voltage slope dv/dt 4.5 V/ns 2
Storage temperature range Tstg -55 150 °C 2
Avalanche current, repetitive or not repetitive IAR 10.5 A pulse width is limited by TJ max. 2
Single pulse avalanche energy EAS 400 mJ starting TJ = 25 °C, ID = IAR, VDD = 50 V 2
Thermal resistance, junction-to-case RthJC 0.66 °C/W TO-220 2
Thermal resistance, junction-to-ambient RthJA 62.5 °C/W TO-220 2

CAD (KiCad official)

  • Symbol: STP12NK80Z
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: stp12nk80z-etched.step / stp12nk80z-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stp12nk80z.step / stp12nk80z.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (22 pp, sha256 8208d1fe4fd5e24d, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF