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STP11NM60FD

STMicroelectronics · MOSFETs · TO-220

STP11NM60FD from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate (G(1) in the internal schematic); gate-source voltage is rated at ±30 V maximum, with gate threshold of 3 V min to 5 V max at ID = 250 µA.
2 D passive Drain (D(2) in the internal schematic); drain-source voltage is rated at 600 V and continuous drain current at 11 A at TC = 25°C. The tab is also shown on the package drawing.
3 S passive Source (S(3) in the internal schematic); the intrinsic fast-recovery body diode is connected between source and drain, with a source-drain current rating of 11 A.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STP11NM60FD
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: stp11nm60fd-etched.step / stp11nm60fd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stp11nm60fd.step / stp11nm60fd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (17 pp, sha256 8dce59e04e67cd50, retrieved 2026-10-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF