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STP11NK50ZFP

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STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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STP11NK50ZFP

STMicroelectronics · MOSFETs · TO-220FP

STP11NK50ZFP from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate is Zener-protected, with gate-source voltage limited to ±30 V and a gate-source ESD rating of 4 kV human body model (C = 100 pF, R = 1.5 kΩ).
2 D passive Drain is rated for 500 V drain-source voltage and 10 A continuous drain current at TC = 25 °C, with 2.5 kV RMS insulation withstand from the leads to the external heat sink.
3 S passive Source is the reference terminal for the body diode, rated 10 A continuous source-drain current with forward voltage VSD of 1.6 V maximum at ISD = 10 A.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220FP
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 500 V 2
Gate-source voltage VGS -30 30 V 2
Drain current (continuous) ID 10 A TC = 25 °C 2
Drain current (continuous) ID 6.3 A TC = 100 °C 2
Drain current (pulsed) IDM 40 A 2
Total power dissipation PTOT 30 W TC = 25 °C 2
Gate-source human body model ESD ESD 4 kV C = 100 pF, R = 1.5 kΩ 2
Peak diode recovery voltage slope dv/dt 4.5 V/ns 2
Insulation withstand voltage (RMS) VISO 2.5 kV from all three leads to external heat sink, t = 1 s; TC = 25 °C 2
Storage temperature range Tstg -55 150 °C 2
Thermal resistance, junction-to-case RthJC 4.2 °C/W 2
Thermal resistance, junction-to-ambient RthJA 62.5 °C/W 2
Avalanche current, repetitive or not-repetitive IAR 10 A pulse width limited by TJ max. 2
Single pulse avalanche energy EAS 190 mJ starting TJ = 25 °C, ID = IAR, VDD = 50 V 2
Drain-source breakdown voltage V(BR)DSS 500 V ID = 1 mA, VGS = 0 V 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 500 V 3
Zero gate voltage drain current at TC = 125 °C IDSS 50 µA VGS = 0 V, VDS = 500 V, TC = 125 °C 3
Gate-body leakage current IGSS -10 10 µA VDS = 0 V, VGS = ±20 V 3
Gate threshold voltage VGS(th) 3 3.75 4.5 V VDS = VGS, ID = 100 µA 3
Static drain-source on-resistance RDS(on) 470 520 mΩ VGS = 10 V, ID = 4.5 A 3
Total gate charge Qg 68 nC VDD = 400 V, ID = 11.4 A, VGS = 0 to 10 V 3
Source-drain current ISD 10 A 4
Source-drain current (pulsed) ISDM 40 A 4
Forward on voltage VSD 1.6 V ISD = 10 A, VGS = 0 V 4

CAD (KiCad official)

  • Symbol: STP11NK50ZFP
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220FP (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (19 pp, sha256 404bfc74d73ec91e, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF