component
STP110N8F6
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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stp110n8f6: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+235
README.md+24@@ -21,6 +21,30 @@ STP110N8F6 from STMicroelectronics, in a TO-220. Pinout and pin descriptions ext | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source breakdown voltage | V(BR)DSS | 80 | | | V | VGS = 0, ID = 1 mA | 4 |+| Zero-gate voltage drain current | IDSS | | | 1 | µA | VGS = 0, VDS = 80 V | 4 |+| Zero-gate voltage drain current (TC = 125 °C) | IDSS | | | 100 | µA | VGS = 0, VDS = 80 V, TC = 125 °C | 4 |+| Gate-body leakage current | IGSS | | | 100 | nA | VDS = 0, VGS = +20 V | 4 |+| Gate threshold voltage | VGS(th) | 2.5 | | 4.5 | V | VDS = VGS, ID = 250 µA | 4 |+| Static drain-source on-resistance | RDS(on) | | 0.0056 | 0.0065 | Ω | VGS = 10 V, ID = 55 A | 4 |+| Forward on voltage | VSD | | | 1.2 | V | ISD = 110 A, VGS = 0 | 5 |+| Drain-source voltage | VDS | | | 80 | V | | 3 |+| Gate-source voltage | VGS | -20 | | 20 | V | | 3 |+| Drain current (continuous) | ID | | | 110 | A | TC = 25 °C | 3 |+| Drain current (continuous) | ID | | | 85 | A | TC = 100 °C | 3 |+| Drain current (pulsed) | IDM | | | 440 | A | Pulse width limited by safe operating area | 3 |+| Total dissipation | PTOT | | | 200 | W | TC = 25 °C | 3 |+| Single pulse avalanche energy | EAS | | | 180 | mJ | Starting TJ = 25 °C, ID = 55 A, VDD = 60 V | 3 |+| Operating junction temperature | TJ | -55 | | 175 | °C | | 3 |+| Thermal resistance junction-case | Rthj-case | | | 0.75 | °C/W | | 3 |+| Thermal resistance junction-ambient | Rthj-amb | | | 62.5 | °C/W | | 3 |+ ## CAD (KiCad official) - Symbol: `STP110N8F6`
page.json+211@@ -135,6 +135,217 @@ "Package": "TO-220", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "d5bf490bf14053b4",+ "rows": [+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 80,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0, ID = 1 mA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero-gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0, VDS = 80 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero-gate voltage drain current (TC = 125 °C)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 0, VDS = 80 V, TC = 125 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0, VGS = +20 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2.5,+ "typ": null,+ "max": 4.5,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.0056,+ "max": 0.0065,+ "conditions": "VGS = 10 V, ID = 55 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "ISD = 110 A, VGS = 0",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "TC = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 85,+ "conditions": "TC = 100 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 440,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total dissipation",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "TC = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 180,+ "conditions": "Starting TJ = 25 °C, ID = 55 A, VDD = 60 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-case",+ "symbol": "Rthj-case",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 0.75,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-ambient",+ "symbol": "Rthj-amb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62.5,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],