component
STP110N8F6
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTP110N8F6
STMicroelectronics · MOSFETs · TO-220
STP110N8F6 from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal rated for ±20 V gate-source voltage maximum. |
| 2 | Drain | passive | Drain terminal rated for 110 A continuous drain current at TC = 25 °C and maximum VDS of 80 V. |
| 3 | Source | passive | Source terminal with integrated body diode forward voltage of 1.2 V at ISD = 110 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 80 | V | VGS = 0, ID = 1 mA | 4 | ||
| Zero-gate voltage drain current | IDSS | 1 | µA | VGS = 0, VDS = 80 V | 4 | ||
| Zero-gate voltage drain current (TC = 125 °C) | IDSS | 100 | µA | VGS = 0, VDS = 80 V, TC = 125 °C | 4 | ||
| Gate-body leakage current | IGSS | 100 | nA | VDS = 0, VGS = +20 V | 4 | ||
| Gate threshold voltage | VGS(th) | 2.5 | 4.5 | V | VDS = VGS, ID = 250 µA | 4 | |
| Static drain-source on-resistance | RDS(on) | 0.0056 | 0.0065 | Ω | VGS = 10 V, ID = 55 A | 4 | |
| Forward on voltage | VSD | 1.2 | V | ISD = 110 A, VGS = 0 | 5 | ||
| Drain-source voltage | VDS | 80 | V | 3 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 3 | ||
| Drain current (continuous) | ID | 110 | A | TC = 25 °C | 3 | ||
| Drain current (continuous) | ID | 85 | A | TC = 100 °C | 3 | ||
| Drain current (pulsed) | IDM | 440 | A | Pulse width limited by safe operating area | 3 | ||
| Total dissipation | PTOT | 200 | W | TC = 25 °C | 3 | ||
| Single pulse avalanche energy | EAS | 180 | mJ | Starting TJ = 25 °C, ID = 55 A, VDD = 60 V | 3 | ||
| Operating junction temperature | TJ | -55 | 175 | °C | 3 | ||
| Thermal resistance junction-case | Rthj-case | 0.75 | °C/W | 3 | |||
| Thermal resistance junction-ambient | Rthj-amb | 62.5 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
STP110N8F6 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
stp110n8f6-etched.step/stp110n8f6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp110n8f6.step/stp110n8f6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (13 pp, sha256
d5bf490bf14053b4, retrieved 2026-09-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).