# STN8205AAST8RG-VB

**VBsemi Elec** · MOSFETs · TSSOP-8

STN8205AAST8RG-VB from VBsemi Elec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Common drain of the dual N-channel MOSFET (VDS rating 25 V), tied to pin 8 externally in the schematic. |
| 2 | S1 | passive | Source of MOSFET 1; continuous drain current up to 6.6 A (10 s) at TA = 25 °C. |
| 3 | S1 | passive | Source of MOSFET 1, second source pin; same net as pin 2. |
| 4 | G1 | input | Gate of MOSFET 1; gate-source voltage limit ±12 V, threshold 0.5 to 1.0 V at 250 µA. |
| 5 | G2 | input | Gate of MOSFET 2; gate-source voltage limit ±12 V, threshold 0.5 to 1.0 V at 250 µA. |
| 6 | S2 | passive | Source of MOSFET 2, second source pin; same net as pin 7. |
| 7 | S2 | passive | Source of MOSFET 2; continuous drain current up to 6.6 A (10 s) at TA = 25 °C. |
| 8 | D | passive | Common drain of the dual N-channel MOSFET (VDS rating 25 V), same net as pin 1. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSSOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 25 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 6.6 | A | TA = 25 °C, t ≤ 10 s, TJ = 150 °C | 1 |
| Continuous Drain Current | ID |  |  | 5.2 | A | TA = 25 °C, steady state, TJ = 150 °C | 1 |
| Continuous Drain Current | ID |  |  | 5.5 | A | TA = 70 °C, t ≤ 10 s, TJ = 150 °C | 1 |
| Continuous Drain Current | ID |  |  | 3.5 | A | TA = 70 °C, steady state, TJ = 150 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 30 | A |  | 1 |
| Continuous Source Current (Diode Conduction) | IS |  |  | 1.5 | A | TA = 25 °C, t ≤ 10 s | 1 |
| Continuous Source Current (Diode Conduction) | IS |  |  | 1 | A | TA = 25 °C, steady state | 1 |
| Maximum Power Dissipation | PD |  |  | 1.5 | W | TA = 25 °C, t ≤ 10 s | 1 |
| Maximum Power Dissipation | PD |  |  | 1 | W | TA = 25 °C, steady state | 1 |
| Maximum Power Dissipation | PD |  |  | 0.96 | W | TA = 70 °C, t ≤ 10 s | 1 |
| Maximum Power Dissipation | PD |  |  | 0.64 | W | TA = 70 °C, steady state | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Gate-Body Leakage | IGSS | -200 |  | 200 | nA | VDS = 0 V, VGS = ± 4.5 V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 |  | 1 | V | VDS = VGS, ID = 250 µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 25 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 25 | µA | VDS = 25 V, VGS = 0 V, TJ = 70 °C | 2 |
| On-State Drain Current | ID(on) | 30 |  |  | A | VDS ≤ 5 V, VGS = 4.5 V | 2 |
| Diode Forward Voltage | VSD |  | 0.71 | 1.2 | V | IS = 1.5 A, VGS = 0 V | 2 |
| Total Gate Charge | Qg |  | 12 | 18 | nC | VDS = 10 V, VGS = 4.5 V, ID = 6.5 A | 2 |
| Turn-On Delay Time | td(on) |  | 245 | 365 | ns | VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω | 2 |
| Rise Time | tr |  | 330 | 495 | ns | VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 860 | 1300 | ns | VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω | 2 |
| Fall Time | tf |  | 510 | 765 | ns | VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω | 2 |
| Maximum Junction-to-Ambient (t ≤ 10 s) | RthJA |  | 72 | 83 | °C/W | t ≤ 10 s | 1 |
| Maximum Junction-to-Ambient (steady state) | RthJA |  | 100 | 120 | °C/W | steady state | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF |  | 55 | 70 | °C/W | steady state | 1 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.022 |  | Ω | VGS = 4.5 V, ID = 6.5 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.032 |  | Ω | VGS = 2.5 V, ID = 5.5 A | 2 |
| Forward Transconductance | gfs |  | 30 |  | S | VDS = 10 V, ID = 6.5 A | 2 |
| Gate-Source Charge | Qgs |  | 2.2 |  | nC | VDS = 10 V, VGS = 4.5 V, ID = 6.5 A | 2 |
| Gate-Drain Charge | Qgd |  | 3.6 |  | nC | VDS = 10 V, VGS = 4.5 V, ID = 6.5 A | 2 |

## CAD (KiCad official)

- Symbol: `STN8205AAST8RG-VB`
- Footprint: `Package_SO:TSSOP-8_4.4x3mm_P0.65mm`
- 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files: `stn8205aast8rg-vb-etched.step` / `stn8205aast8rg-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stn8205aast8rg-vb.step` / `stn8205aast8rg-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/stn8205aast8rg-vb-datasheet.pdf) (8 pp, sha256 `a613271357c47d5c`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stn8205aast8rg-vb-datasheet.pdf)