component
STN4260
Public Made by Adomby adom
STANSON Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownSTN4260
STANSON Tech · MOSFETs · SOP-8
STN4260 from STANSON Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied internally to pins 2 and 3. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied internally to pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied internally to pins 1 and 2. |
| 4 | G | input | Gate terminal; VGS rated ±20 V with threshold 1.0 to 2.5 V at ID=250uA. |
| 5 | D | passive | Drain terminal, tied internally to pins 6, 7 and 8; VDSS 60 V. |
| 6 | D | passive | Drain terminal, tied internally to pins 5, 7 and 8; VDSS 60 V. |
| 7 | D | passive | Drain terminal, tied internally to pins 5, 6 and 8; VDSS 60 V. |
| 8 | D | passive | Drain terminal, tied internally to pins 5, 6 and 7; VDSS 60 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STANSON Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | Ta = 25℃ unless otherwise noted | 2 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 20 | A | TJ=150℃, TA=25℃ | 2 | ||
| Continuous Drain Current | ID | 14 | A | TJ=150℃, TA=70℃ | 2 | ||
| Pulsed Drain Current | IDM | 110 | A | 2 | |||
| Continuous Source Current (Diode Conduction) | IS | 4.5 | A | 2 | |||
| Power Dissipation | PD | 3.1 | W | TA=25℃ | 2 | ||
| Power Dissipation | PD | 2 | W | TA=70℃ | 2 | ||
| Operation Junction Temperature | TJ | 150 | ℃ | 2 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance-Junction to Ambient | RθJA | 70 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250uA | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS=VGS, ID=250uA | 3 | |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=60V, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | uA | VDS=60V, VGS=0V, TJ=25℃ | 3 | ||
| Drain-source On-Resistance | RDS(on) | 11.5 | 13 | mΩ | VGS=10V, ID=10A | 3 | |
| Drain-source On-Resistance | RDS(on) | 12.5 | 14 | mΩ | VGS=4.5V, ID=8A | 3 | |
| Diode Forward Voltage | VSD | 0.8 | 1 | V | IS=1A, VGS=0V | 3 | |
| Total Gate Charge | Qg | 40 | 58 | nC | VDS=30V, VGS=10V, ID≡10A | 3 | |
| Gate-Source Charge | Qgs | 6 | 9 | nC | VDS=30V, VGS=10V, ID≡10A | 3 | |
| Gate-Drain Charge | Qgd | 8.8 | 14 | nC | VDS=30V, VGS=10V, ID≡10A | 3 | |
| Turn-On Delay Time | td(on) | 9.5 | 18 | nS | VDD=15V, VGS=10V, RG=6Ω, ID=1A | 3 | |
| Turn-On Rise Time | tr | 28 | 54 | nS | VDD=15V, VGS=10V, RG=6Ω, ID=1A | 3 | |
| Turn-Off Delay Time | td(off) | 45.3 | 86 | nS | VDD=15V, VGS=10V, RG=6Ω, ID=1A | 3 | |
| Turn-Off Fall Time | tf | 80 | 120 | nS | VDD=15V, VGS=10V, RG=6Ω, ID=1A | 3 | |
| Forward Transconductance | gfs | 11.7 | S | VDS=10V, ID=6A | 3 | ||
| Input Capacitance | Ciss | 2100 | pF | VDS=25V, VGS=0V, F=1MHz | 3 | ||
| Output Capacitance | Coss | 165 | pF | VDS=25V, VGS=0V, F=1MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 80 | pF | VDS=25V, VGS=0V, F=1MHz | 3 |
CAD (KiCad official)
- Symbol:
STN4260 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
stn4260-etched.step/stn4260-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stn4260.step/stn4260.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STANSON Tech datasheet (6 pp, sha256
ff2f37f602c1abc5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).