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STM8309-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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STM8309-VB

VBsemi Elec · MOSFETs · SO-8

STM8309-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, 30 V, VGS ±20 V max).
2 G1 input Gate of MOSFET 1 (N-channel), absolute maximum VGS ±20 V.
3 S2 passive Source of MOSFET 2 (P-channel, -30 V, VGS ±20 V max).
4 G2 input Gate of MOSFET 2 (P-channel), absolute maximum VGS ±20 V.
5 D2 passive Drain of MOSFET 2 (P-channel), -30 V VDS max, pulsed drain current -40 A.
6 D2 passive Drain of MOSFET 2 (P-channel), internally common with pin 5.
7 D1 passive Drain of MOSFET 1 (N-channel), 30 V VDS max, pulsed drain current 40 A.
8 D1 passive Drain of MOSFET 1 (N-channel), internally common with pin 7.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Ch) VDS 30 V TA = 25 °C, N-Channel 1
Drain-Source Voltage (P-Ch) VDS -30 V TA = 25 °C, P-Channel 1
Gate-Source Voltage VGS -20 20 V N-Ch and P-Ch 1
Continuous Drain Current (N-Ch) ID 8 A TC = 25 °C, TJ = 150 °C, package limited 1
Continuous Drain Current (P-Ch) ID -8 A TC = 25 °C, TJ = 150 °C, package limited 1
Pulsed Drain Current (N-Ch) IDM 40 A 10 µs pulse width 1
Pulsed Drain Current (P-Ch) IDM -40 A 10 µs pulse width 1
Source-Drain Diode Current (N-Ch) IS 2.6 A TC = 25 °C 1
Source-Drain Diode Current (P-Ch) IS -2.6 A TC = 25 °C 1
Single Pulse Avalanche Current (N-Ch) IAS 10 A L = 0.1 mH 1
Single Pulse Avalanche Current (P-Ch) IAS 20 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 520 mJ L = 0.1 mH 1
Maximum Power Dissipation (TA) PD 2 W TA = 25 °C, N-Ch and P-Ch, 1" x 1" FR4, t = 10 s 1
Operating Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance (N-Ch) RthJA 50 62.5 °C/W t ≤ 10 s, surface mounted on 1" x 1" FR4 1
Junction-to-Ambient Thermal Resistance (P-Ch) RthJA 47 62.5 °C/W t ≤ 10 s, surface mounted on 1" x 1" FR4 1
Junction-to-Foot Thermal Resistance (N-Ch) RthJF 30 40 °C/W Steady State 1
Junction-to-Foot Thermal Resistance (P-Ch) RthJF 29 38 °C/W Steady State 1
Drain-Source Breakdown Voltage (N-Ch) VDS 30 V VGS = 0 V, ID = 250 µA 2
Drain-Source Breakdown Voltage (P-Ch) VDS -30 V VGS = 0 V, ID = - 250 µA 2
Gate Threshold Voltage (N-Ch) VGS(th) 1 2 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage (P-Ch) VGS(th) -1 -2 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage (N-Ch) IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Gate-Body Leakage (P-Ch) IGSS -100 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -1 µA VDS = - 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -10 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current (N-Ch) ID(on) 20 A VDS = 5 V, VGS = 10 V 2
On-State Drain Current (P-Ch) ID(on) -20 A VDS = - 5 V, VGS = - 10 V 2
Forward Transconductance (N-Ch) gfs 27 S VDS = 15 V, ID = 6.8 A 2
Forward Transconductance (P-Ch) gfs 25 S VDS = - 15 V, ID = - 6.7 A 2
Gate Resistance (P-Ch) Rg 1.2 5.7 9.6 Ω f = 1 MHz 2
Body Diode Voltage (N-Ch) VSD 0.81 1.2 V IS = 5.4 A 3
Body Diode Voltage (P-Ch) VSD -0.77 -1.2 V IS = - 2 A 3
Turn-On Delay Time (P-Ch) td(on) 10 16 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 3
Rise Time (P-Ch) tr 9 15 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 3
Fall Time (P-Ch) tf 10 16 ns VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 3
Body Diode Reverse Recovery Time (P-Ch) trr 31 57 ns IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C 3

CAD (KiCad official)

  • Symbol: STM8309-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: stm8309-vb-etched.step / stm8309-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stm8309-vb.step / stm8309-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 2a27fa6b38ad612b, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF