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STL8N10F7-VB

Public Made by Adom

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VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstl8n10f7-vbfactory-2.0.0extractor-text

Verified STL8N10F7-VB

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 9 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: STL8N10F7-VB · DFN5x6-8 · 9 pins
  • ✓copper: 16 copper pads, none touching another net
  • ✓datasheet: all 9 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: DFN-S-8-1EP_6x5mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-omg6hx22/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 9 pins = 9 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 9 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ stl8n10f7-vb.kicad_sym✓ stl8n10f7-vb.kicad_mod✓ stl8n10f7-vb.step
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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8d ago
viewers stl8n10f7-vb: viewers · Ray 8d ago
package.json Publish 0.1.0 · Ray 8d ago
page.json Set visibility: public · Ray 8d ago
README.md Publish 0.1.0 · Ray 8d ago
stl8n10f7-vb-etched.glb Publish 0.1.0 · Ray 8d ago
stl8n10f7-vb-etched.step stl8n10f7-vb: factory component page (tier=lcsc) · Ray 8d ago
stl8n10f7-vb-hero.glb stl8n10f7-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
stl8n10f7-vb-hero.overlay.json Publish 0.1.0 · Ray 8d ago
stl8n10f7-vb.glb Publish 0.1.0 · Ray 8d ago
stl8n10f7-vb.kicad_mod Publish 0.1.0 · Ray 8d ago
stl8n10f7-vb.kicad_sym Publish 0.1.0 · Ray 8d ago
stl8n10f7-vb.lbr Publish 0.1.0 · Ray 8d ago
stl8n10f7-vb.step Publish 0.1.0 · Ray 8d ago
verification.json Verified: Published by the parts factory: tier lcsc, 9 pins · Ray 8d ago

STL8N10F7-VB

VBsemi Elec · MOSFETs · DFN5x6-8

STL8N10F7-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (pin 1, marked with a dot); continuous source current (diode conduction) is rated 110 A, package limited.
2 S passive Source terminal of the N-channel MOSFET, tied to the other source pins.
3 S passive Source terminal of the N-channel MOSFET, tied to the other source pins.
4 G input Gate terminal with a ±20 V maximum gate-source voltage and a threshold voltage measured at VDS = VGS, ID = 250 µA.
5 D passive Drain terminal with a 100 V minimum drain-source breakdown voltage (VGS = 0 V, ID = 250 µA).
6 D passive Drain terminal, tied to the other drain pins; pulsed drain current is rated 90 A.
7 D passive Drain terminal, tied to the other drain pins; continuous drain current is 30 A at TC = 25 °C.
8 D passive Drain terminal, tied to the other drain pins.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID 20 A TC = 100 °C, TJ = 175 °C, package limited 1
Pulsed Drain Current IDM 90 A TC = 25 °C 1
Continuous Source Current (Diode Conduction) IS 110 A TC = 25 °C 1
Avalanche Current IAS 50 A L = 0.1 mH 1
Single Avalanche Energy EAS 110 mJ Duty Cycle ≤ 1 %, L = 0.1 mH 1
Maximum Power Dissipation PD 136 W TC = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance (t ≤ 10 s) RthJA 15 18 °C/W t ≤ 10 sec 1
Junction-to-Ambient Thermal Resistance (steady state) RthJA 40 50 °C/W Steady State 1
Junction-to-Case Thermal Resistance RthJC 0.85 1.1 °C/W 1
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 30V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 30V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 60 A VDS = 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.008 Ω VGS = 10 V, ID = 20 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.01 Ω VGS = 10 V, ID = 20 A, TJ = 175 °C 2
Forward Transconductance gfs 60 S VDS = 15 V, ID = 20 A 2
Total Gate Charge Qg 55 70 nC VDS = 100 V, VGS = 10 V, ID = 50 A 2
Turn-On Delay Time td(on) 15 24 ns VDD = 100 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Rise Time tr 15 25 ns VDD = 100 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 35 50 ns VDD = 100 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 20 30 ns VDD = 100 V, RL = 0.6 Ω, ID ≅ 50 A, VGEN = 10 V, Rg = 2.5 Ω 2
Pulsed Source Current ISM 90 A TC = 25 °C 2
Input Capacitance Ciss 3300 pF VGS = 0 V, VDS = 100 V, f = 1 MHz 2
Output Capacitance Coss 470 pF VGS = 0 V, VDS = 100 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 225 pF VGS = 0 V, VDS = 100 V, f = 1 MHz 2
Gate-Source Charge Qgs 17 nC VDS = 100 V, VGS = 10 V, ID = 50 A 2
Gate-Drain Charge Qgd 16 nC VDS = 100 V, VGS = 10 V, ID = 50 A 2
Reverse Recovery Time trr 135 ns IF = 20 A, di/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: STL8N10F7-VB
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: stl8n10f7-vb-etched.step / stl8n10f7-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stl8n10f7-vb.step / stl8n10f7-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 039cbb73a1b93b7b, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF