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STGWA40M120DF3

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STMicroelectronics IGBTs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorstgwa40m120df3factory-2.0.0extractor-text
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STGWA40M120DF3

STMicroelectronics · IGBTs · TO-247

STGWA40M120DF3 from STMicroelectronics, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the IGBT, with a maximum gate-emitter voltage of ±20 V.
2 C passive Collector of the IGBT (also connected to the TAB), with a collector-emitter voltage of 1200 V and 40 A continuous collector current at TC = 100 °C.
3 E passive Emitter of the IGBT, which is the anode side of the antiparallel diode's return path with 40 A continuous forward current at TC = 100 °C.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-247
Category Triode/MOS Tube/Transistor
Pins 3

CAD (KiCad official)

  • Symbol: STGWA40M120DF3
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: stgwa40m120df3-etched.step / stgwa40m120df3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgwa40m120df3.step / stgwa40m120df3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (18 pp, sha256 bbceefd63675820f, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF