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Contents

README

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STGWA100H65DFB2

STMicroelectronics · IGBT Transistors / Modules · TO-247

STGWA100H65DFB2 from STMicroelectronics, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-emitter voltage is limited to ±20 V continuous and ±30 V transient (tp ≤ 10 µs).
2 C passive Collector terminal, also connected to the mounting tab; collector-emitter voltage is 650 V (VGE = 0 V) with continuous collector current of 145 A at TC = 25 °C.
3 E passive Emitter terminal, the reference for the gate-emitter voltage limits of ±20 V continuous and ±30 V transient.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-247
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCES 650 V VGE = 0 V 2
Continuous collector current at TC = 25 °C IC 145 A TC = 25 °C 2
Continuous collector current at TC = 100 °C IC 91 A TC = 100 °C 2
Pulsed collector current ICP 300 A tp ≤ 1 μs, TJ < 175 °C 2
Gate-emitter voltage VGE -20 20 V 2
Transient gate-emitter voltage VGE -30 30 V tp ≤ 10 μs 2
Continuous forward current at TC = 25 °C IF 110 A TC = 25 °C 2
Continuous forward current at TC = 100 °C IF 65 A TC = 100 °C 2
Pulsed forward current IFP 300 A tp ≤ 1 μs, TJ < 175 °C 2
Total power dissipation at TC = 25 °C PTOT 441 W TC = 25 °C 2
Storage temperature range TSTG -55 150 °C 2
Operating junction temperature range TJ -55 175 °C 2
Thermal resistance, junction-to-case IGBT RthJC 0.34 °C/W 2
Thermal resistance, junction-to-case diode RthJC 0.49 °C/W 2
Thermal resistance, junction-to-ambient RthJA 50 °C/W 2
Gate threshold voltage VGE(th) 4.5 5.5 6.5 V VCE = VGE, IC = 1 mA 3
Collector-emitter saturation voltage VCE(sat) 1.55 2 V VGE = 15 V, IC = 100 A 3
Forward on-voltage VF 1.9 2.45 V IF = 100 A 3
Collector-emitter breakdown voltage V(BR)CES 650 V VGE = 0 V, IC = 1 mA 3
Collector-emitter saturation voltage at TJ = 125 °C VCE(sat) 1.8 V VGE = 15 V, IC = 100 A, TJ = 125 °C 3
Collector-emitter saturation voltage at TJ = 175 °C VCE(sat) 1.9 V VGE = 15 V, IC = 100 A, TJ = 175 °C 3
Forward on-voltage at TJ = 125 °C VF 1.6 V IF = 100 A, TJ = 125 °C 3
Forward on-voltage at TJ = 175 °C VF 1.5 V IF = 100 A, TJ = 175 °C 3
Collector cut-off current ICES 25 µA VGE = 0 V, VCE = 650 V 3
Gate-emitter leakage current IGES -250 250 nA VCE = 0 V, VGE = ±20 V 3

CAD (KiCad official)

  • Symbol: STGWA100H65DFB2
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: stgwa100h65dfb2-etched.step / stgwa100h65dfb2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgwa100h65dfb2.step / stgwa100h65dfb2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (15 pp, sha256 608eef0b4c10a061, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF