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STGW40M120DF3

Public Made by Adom

by adom

STMicroelectronics IGBT Transistors / Modules, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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STGW40M120DF3

STMicroelectronics · IGBT Transistors / Modules · TO-247

STGW40M120DF3 from STMicroelectronics, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-emitter voltage is limited to ±20 V (VGE).
2 C passive Collector terminal, also connected to the metal tab; the collector-emitter voltage VCES is rated at 1200 V with VGE = 0 V.
3 E passive Emitter terminal, the reference for VGE and VCE in the datasheet ratings.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-247
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCES 1200 V VGE = 0 V 2
Continuous collector current at TC = 25 °C IC 80 A TC = 25 °C 2
Continuous collector current at TC = 100 °C IC 40 A TC = 100 °C 2
Pulsed collector current ICP 160 A Pulse width limited by maximum junction temperature 2
Gate-emitter voltage VGE -20 20 V 2
Continuous forward current at TC = 25 °C IF 80 A TC = 25 °C 2
Continuous forward current at TC = 100 °C IF 40 A TC = 100 °C 2
Pulsed forward current IFP 160 A Pulse width limited by maximum junction temperature 2
Total power dissipation PTOT 468 W TC = 25 °C 2
Storage temperature range TSTG -55 150 °C 2
Operating junction temperature range TJ -55 175 °C 2
Thermal resistance, junction-to-case IGBT RthJC 0.32 °C/W 2
Thermal resistance, junction-to-case diode RthJC 0.74 °C/W 2
Thermal resistance, junction-to-ambient RthJA 50 °C/W 2
Collector-emitter breakdown voltage V(BR)CES 1200 V VGE = 0 V, IC = 2 mA 3
Collector-emitter saturation voltage VCE(sat) 1.85 2.3 V VGE = 15 V, IC = 40 A 3
Collector-emitter saturation voltage at TJ = 125 °C VCE(sat) 2.2 V VGE = 15 V, IC = 40 A, TJ = 125 °C 3
Collector-emitter saturation voltage at TJ = 175 °C VCE(sat) 2.3 V VGE = 15 V, IC = 40 A, TJ = 175 °C 3
Forward on-voltage VF 2.85 3.95 V IF = 40 A 3
Forward on-voltage at TJ = 125 °C VF 2.25 V IF = 40 A, TJ = 125 °C 3
Forward on-voltage at TJ = 175 °C VF 2.1 V IF = 40 A, TJ = 175 °C 3
Gate threshold voltage VGE(th) 5 6 7 V VCE = VGE, IC = 2 mA 3
Collector cut-off current ICES 25 µA VGE = 0 V, VCE = 1200 V 3
Gate-emitter leakage current IGES -250 250 nA VGE = ±20 V, VCE = 0 V 3
Short-circuit withstand time tsc 10 µs VCC ≤ 600 V, VGE = 15 V, TJstart ≤ 150 °C 4
Turn-on delay time td(on) 35 ns VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω 4
Current rise time tr 15 ns VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω 4
Turn-on current slope (di/dt)on 2100 A/µs VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω 4
Turn-off-delay time td(off) 140 ns VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω 4
Current fall time tf 135 ns VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω 4
Turn-on switching energy Eon 1.5 mJ VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω 4
Turn-off switching energy Eoff 2.25 mJ VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω 4
Total switching energy Ets 3.75 mJ VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω 4
Turn-on delay time at TJ = 175 °C td(on) 35 ns VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 4
Current rise time at TJ = 175 °C tr 18 ns VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 4
Turn-on current slope at TJ = 175 °C (di/dt)on 1800 A/µs VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 4
Turn-off-delay time at TJ = 175 °C td(off) 150 ns VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 4
Current fall time at TJ = 175 °C tf 240 ns VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 4
Turn-on switching energy at TJ = 175 °C Eon 2.8 mJ VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 4
Turn-off switching energy at TJ = 175 °C Eoff 3.45 mJ VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 4
Total switching energy at TJ = 175 °C Ets 6.25 mJ VCE = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 4
Input capacitance Cies 2500 pF VCE = 25 V, f = 1 MHz, VGE = 0 V 3
Output capacitance Coes 275 pF VCE = 25 V, f = 1 MHz, VGE = 0 V 3
Reverse transfer capacitance Cres 95 pF VCE = 25 V, f = 1 MHz, VGE = 0 V 3
Total gate charge Qg 125 nC VCC = 960 V, IC = 40 A, VGE = 0 to 15 V 3
Gate-emitter charge Qge 15 nC VCC = 960 V, IC = 40 A, VGE = 0 to 15 V 3
Gate-collector charge Qgc 75 nC VCC = 960 V, IC = 40 A, VGE = 0 to 15 V 3
Reverse recovery time trr 355 ns IF = 40 A, VR = 600 V, VGE = 15 V, di/dt = 1000 A/µs 4
Reverse recovery charge Qrr 2575 nC IF = 40 A, VR = 600 V, VGE = 15 V, di/dt = 1000 A/µs 4
Reverse recovery current Irrm 25 A IF = 40 A, VR = 600 V, VGE = 15 V, di/dt = 1000 A/µs 4
Peak rate of fall of reverse recovery current during tb dIrr/dt 1110 A/µs IF = 40 A, VR = 600 V, VGE = 15 V, di/dt = 1000 A/µs 4
Reverse recovery energy Err 1.12 mJ IF = 40 A, VR = 600 V, VGE = 15 V, di/dt = 1000 A/µs 4
Reverse recovery time at TJ = 175 °C trr 667 ns IF = 40 A, VR = 600 V, VGE = 15 V, TJ = 175 °C 4
Reverse recovery charge at TJ = 175 °C Qrr 8500 nC IF = 40 A, VR = 600 V, VGE = 15 V, TJ = 175 °C 4
Reverse recovery current at TJ = 175 °C Irrm 37 A IF = 40 A, VR = 600 V, VGE = 15 V, TJ = 175 °C 4
Peak rate of fall of reverse recovery current during tb at TJ = 175 °C dIrr/dt 450 A/µs IF = 40 A, VR = 600 V, VGE = 15 V, TJ = 175 °C 4
Reverse recovery energy at TJ = 175 °C Err 3.9 mJ IF = 40 A, VR = 600 V, VGE = 15 V, TJ = 175 °C 4

CAD (KiCad official)

  • Symbol: STGW40M120DF3
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: stgw40m120df3-etched.step / stgw40m120df3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgw40m120df3.step / stgw40m120df3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (17 pp, sha256 ad7ed3554b6c6753, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF