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Contents

README

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STGW40H65DFB

STMicroelectronics · IGBT Transistors / Modules · TO-247

STGW40H65DFB from STMicroelectronics, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the IGBT; gate-emitter voltage is rated at ±20 V with a transient rating of ±30 V.
2 C passive Collector terminal (also the TAB) of the IGBT; collector-emitter voltage rating is 650 V and continuous collector current is 40 A at TC = 100 °C.
3 E passive Emitter terminal of the IGBT, common with the anode of the antiparallel diode; continuous forward current is 40 A at TC = 100 °C.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-247
Category Transistors/Thyristors
Pins 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing Abs Updated title in cover page. Updated Table 1. Absolute maximum ratings. 14

CAD (KiCad official)

  • Symbol: STGW40H65DFB
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: stgw40h65dfb-etched.step / stgw40h65dfb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgw40h65dfb.step / stgw40h65dfb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (16 pp, sha256 56ccdc9523b8fb06, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF