component
STGW30V60DF
Public Made by Adomby adom
STMicroelectronics IGBTs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTGW30V60DF
STMicroelectronics · IGBTs · TO-247
STGW30V60DF from STMicroelectronics, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the IGBT, rated for a gate-emitter voltage of ±20 V (VGE) per the absolute maximum ratings. |
| 2 | C | passive | Collector of the IGBT, rated for a collector-emitter voltage of 600 V (VCES) and a continuous collector current of 60 A at TC = 25 °C. |
| 3 | E | passive | Emitter of the IGBT, the reference terminal for the collector-emitter voltage VCES (VGE = 0) and the gate-emitter voltage VGE. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCES | 600 | V | VGE = 0 | 2 | ||
| Continuous collector current at TC = 25 °C | IC | 60 | A | TC = 25 °C | 2 | ||
| Continuous collector current at TC = 100 °C | IC | 30 | A | TC = 100 °C | 2 | ||
| Pulsed collector current | ICP | 120 | A | Pulse width limited by maximum junction temperature | 2 | ||
| Gate-emitter voltage | VGE | -20 | 20 | V | 2 | ||
| Continuous forward current at TC = 25 °C | IF | 60 | A | TC = 25 °C | 2 | ||
| Continuous forward current at TC = 100 °C | IF | 30 | A | TC = 100 °C | 2 | ||
| Pulsed forward current | IFP | 120 | A | 2 | |||
| Total dissipation | PTOT | 258 | W | TC = 25 °C | 2 | ||
| Storage temperature range | TSTG | -55 | 150 | °C | 2 | ||
| Operating junction temperature | TJ | -55 | 175 | °C | 2 | ||
| Thermal resistance junction-case IGBT | RthJC | 0.58 | °C/W | IGBT | 2 | ||
| Thermal resistance junction-case diode | RthJC | 2.08 | °C/W | diode | 2 | ||
| Thermal resistance junction-ambient | RthJA | 50 | °C/W | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | 1.85 | 2.3 | V | VGE = 15 V, IC = 30 A, TJ = 25 °C | 3 | |
| Forward on-voltage | VF | 2 | 2.6 | V | IF = 30 A | 3 | |
| Gate threshold voltage | VGE(th) | 5 | 6 | 7 | V | VCE = VGE, IC = 1 mA | 3 |
| Collector cut-off current (VGE = 0) | ICES | 25 | µA | VCE = 600 V | 3 | ||
| Gate-emitter leakage current (VCE = 0) | IGES | 250 | nA | VGE = ± 20 V | 3 |
CAD (KiCad official)
- Symbol:
STGW30V60DF - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files:
stgw30v60df-etched.step/stgw30v60df-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stgw30v60df.step/stgw30v60df.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (22 pp, sha256
30b790e4e3df2725, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).