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STGW30H60DFB

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STMicroelectronics IGBTs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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STGW30H60DFB

STMicroelectronics · IGBTs · TO-247

STGW30H60DFB from STMicroelectronics, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the IGBT, with an absolute maximum gate-emitter voltage of ±20 V (±30 V transient) and a gate threshold voltage of 5 to 7 V at VCE = VGE, IC = 1 mA.
2 C passive Collector of the IGBT, also connected to the metal tab, with a collector-emitter voltage rating of 600 V and a continuous collector current of 60 A at TC = 25 °C (30 A at TC = 100 °C).
3 E passive Emitter of the IGBT, and the anode side of the antiparallel diode, which carries a continuous forward current of 60 A at TC = 25 °C (30 A at TC = 100 °C).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-247
Category Triode/MOS Tube/Transistor
Pins 3

CAD (KiCad official)

  • Symbol: STGW30H60DFB
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: stgw30h60dfb-etched.step / stgw30h60dfb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgw30h60dfb.step / stgw30h60dfb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (21 pp, sha256 7687a64c78b2fcaa, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF