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STGW20NC60VD

STMicroelectronics · IGBTs · TO-247

STGW20NC60VD from STMicroelectronics, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, the control terminal of the IGBT, rated for a gate-emitter voltage of ±20 V maximum.
2 C passive Collector, rated for 600 V collector-emitter voltage (VCES) and 60 A continuous current at Tc = 25 °C (30 A at 100 °C).
3 E passive Emitter of the IGBT, which is also the anode of the internal antiparallel diode (30 A RMS forward current at Tc = 25 °C).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-247
Category Transistors
Pins 3

CAD (KiCad official)

  • Symbol: STGW20NC60VD
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: stgw20nc60vd-etched.step / stgw20nc60vd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgw20nc60vd.step / stgw20nc60vd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (14 pp, sha256 776d44d7ec999321, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF