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STGP8NC60KD

Public Made by Adom

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STMicroelectronics IGBT Transistors / Modules, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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STGP8NC60KD

STMicroelectronics · IGBT Transistors / Modules · TO-220

STGP8NC60KD from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the IGBT, with gate-emitter voltage limited to ±20 V and threshold VGE(th) of 4.5 V min to 6.5 V max at IC = 250 µA.
2 C passive Collector of the IGBT (also the tab connection), with collector-emitter voltage VCES of 600 V and antiparallel diode to the emitter.
3 E passive Emitter of the IGBT, the antiparallel diode anode, with continuous collector current of 15 A at TC = 25 °C and 8 A at TC = 100 °C.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STGP8NC60KD
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: stgp8nc60kd-etched.step / stgp8nc60kd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgp8nc60kd.step / stgp8nc60kd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (18 pp, sha256 5c34c84fe3037cf2, retrieved 2026-10-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF