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Generated by kicad-footprint-generator · KiCad file format 20260206
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STGP4M65DF2

STMicroelectronics · IGBT Transistors / Modules · TO-220

STGP4M65DF2 from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G passive Gate terminal of the IGBT, with a maximum gate-emitter voltage of ±20 V.
2 C passive Collector terminal, also connected to the TAB, rated 650 V collector-emitter (VCES) and 4 A continuous at TC = 100 °C.
3 E passive Emitter terminal of the IGBT, which is also the anode of the antiparallel diode.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STGP4M65DF2
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: stgp4m65df2-etched.step / stgp4m65df2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgp4m65df2.step / stgp4m65df2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (16 pp, sha256 3c80bac2928a05fe, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF