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Ray stgp3nc120hd: specified limits as data (metadata.characteristics, 19 rows from the datasheet) 2beed85 16d ago

STGP3NC120HD

STMicroelectronics · IGBT Transistors / Modules · TO-220

STGP3NC120HD from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the IGBT, driven relative to the emitter with a gate-emitter voltage rated at ±20 V (VGE), and gate threshold VGE(th) of 2 V to 5 V at VCE = VGE, IC = 250 µA.
2 C passive Collector of the IGBT, rated for a collector-emitter voltage VCES of 1200 V (VGE = 0 V) and a continuous collector current of 14 A at TC = 25 °C for the TO-220 package.
3 E passive Emitter of the IGBT, the other main current terminal, with the collector-emitter limits of VCES 1200 V and 14 A continuous collector current at TC = 25 °C given for the TO-220 package.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage V(BR)CES 1200 V VGE = 0 V, IC = 1 mA 3
Collector-emitter saturation voltage VCE(sat) 2.3 2.8 V VGE = 15 V, IC = 3 A 3
Gate threshold voltage VGE(th) 2 5 V VCE = VGE, IC = 250 μA 3
Collector cut-off current ICES 0.05 mA VGE = 0 V, VCE = 1200 V 3
Collector cut-off current (specified by design, not tested in production) ICES 1 mA VGE = 0 V, VCE = 1200 V, TJ = 125 °C 3
Gate-emitter leakage current IGES -100 100 nA VCE = 0 V, VGE = ±20 V 3
Diode forward on-voltage VF 1.6 2 V IF = 1.5 A 4
Collector-emitter voltage VCES 1200 V VGE = 0 V 2
Continuous collector current at TC = 25 °C IC 14 A TO-220 column; TC = 25 °C 2
Continuous collector current at TC = 100 °C IC 7 A TO-220 column; TC = 100 °C 2
Turn-off latching current ICL 14 A Vclamp = 80% VCES, TJ = 150 °C, RG = 10 Ω, VGE = 15 V 2
Pulsed collector current ICP 20 A Pulse width limited by maximum junction temperature and turn-off within RBSOA 2
Gate-emitter voltage VGE -20 20 V 2
Diode RMS forward current at TC = 25 °C IF 3 A TC = 25 °C 2
Surge non repetitive forward current IFSM 12 A tp = 10 ms sinusoidal 2
Total power dissipation at TC = 25 °C PTOT 75 W TO-220 column; TC = 25 °C 2
Storage temperature range Tstg -55 150 °C 2
Thermal resistance, junction-to-case IGBT RthJC 1.65 °C/W TO-220 column 2
Thermal resistance, junction-to-ambient RthJA 62.5 °C/W 2

CAD (KiCad official)

  • Symbol: STGP3NC120HD
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: stgp3nc120hd-etched.step / stgp3nc120hd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgp3nc120hd.step / stgp3nc120hd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (20 pp, sha256 79ca9206aa12beb3, retrieved 2026-10-11, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF