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STGP30H60DFB
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STMicroelectronics IGBT Transistors / Modules, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STGP30H60DFB
STMicroelectronics · IGBT Transistors / Modules · TO-220
STGP30H60DFB from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the IGBT; gate-emitter voltage is rated ±20 V continuous and ±30 V transient, with a threshold of 5 to 7 V at IC = 1 mA. |
| 2 | C | passive | Collector (also connected to the TAB); collector-emitter voltage is rated 600 V and continuous collector current is 60 A at TC = 25 °C and 30 A at TC = 100 °C. |
| 3 | E | passive | Emitter of the IGBT, connected to the anode of the antiparallel diode; continuous forward current is 60 A at TC = 25 °C and 30 A at TC = 100 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
STGP30H60DFB - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
stgp30h60dfb-etched.step/stgp30h60dfb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stgp30h60dfb.step/stgp30h60dfb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (21 pp, sha256
00c1d2f1438638ae, retrieved 2026-10-11, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STGP30H60DFB
**STMicroelectronics** · IGBT Transistors / Modules · TO-220
STGP30H60DFB from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the IGBT; gate-emitter voltage is rated ±20 V continuous and ±30 V transient, with a threshold of 5 to 7 V at IC = 1 mA. |
| 2 | C | passive | Collector (also connected to the TAB); collector-emitter voltage is rated 600 V and continuous collector current is 60 A at TC = 25 °C and 30 A at TC = 100 °C. |
| 3 | E | passive | Emitter of the IGBT, connected to the anode of the antiparallel diode; continuous forward current is 60 A at TC = 25 °C and 30 A at TC = 100 °C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `STGP30H60DFB`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `stgp30h60dfb-etched.step` / `stgp30h60dfb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stgp30h60dfb.step` / `stgp30h60dfb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590457471698432000) (21 pp, sha256 `00c1d2f1438638ae`, retrieved 2026-10-11, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stgp30h60dfb-datasheet.pdf)