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STGP20H60DF
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STMicroelectronics IGBT Transistors / Modules, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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STGP20H60DF
STMicroelectronics · IGBT Transistors / Modules · TO-220
STGP20H60DF from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the IGBT, where the gate-emitter voltage is limited to ±20 V (Table 1, absolute maximum ratings). |
| 2 | C | passive | Collector terminal, rated for a collector-emitter voltage VCES of 600 V (VGE = 0 V) and a continuous collector current of 40 A at TC = 25 °C or 20 A at TC = 100 °C. |
| 3 | E | passive | Emitter terminal of the IGBT; the datasheet gives no separate emitter-pin rating beyond the device ratings in Table 1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
STGP20H60DF - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
stgp20h60df-etched.step/stgp20h60df-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stgp20h60df.step/stgp20h60df.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (22 pp, sha256
39697b0ca0214ad4, retrieved 2026-10-07, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STGP20H60DF
**STMicroelectronics** · IGBT Transistors / Modules · TO-220
STGP20H60DF from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the IGBT, where the gate-emitter voltage is limited to ±20 V (Table 1, absolute maximum ratings). |
| 2 | C | passive | Collector terminal, rated for a collector-emitter voltage VCES of 600 V (VGE = 0 V) and a continuous collector current of 40 A at TC = 25 °C or 20 A at TC = 100 °C. |
| 3 | E | passive | Emitter terminal of the IGBT; the datasheet gives no separate emitter-pin rating beyond the device ratings in Table 1. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## CAD (KiCad official)
- Symbol: `STGP20H60DF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `stgp20h60df-etched.step` / `stgp20h60df-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stgp20h60df.step` / `stgp20h60df.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stgp20h60df.pdf) (22 pp, sha256 `39697b0ca0214ad4`, retrieved 2026-10-07, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stgp20h60df-datasheet.pdf)