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STGF30M65DF2

Public Made by Adom

by adom

STMicroelectronics IGBT Transistors / Modules, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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STGF30M65DF2

STMicroelectronics · IGBT Transistors / Modules · TO-220FP

STGF30M65DF2 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the IGBT, with gate-emitter voltage rated at VGE ±20 V absolute maximum.
2 C passive Collector terminal of the IGBT, with collector-emitter voltage rated at VCES 650 V.
3 E passive Emitter terminal of the IGBT, used as the reference for VGE and VCE.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220FP
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCES 650 V VGE = 0 V 3
Continuous collector current at TC = 25 °C IC 60 A TC = 25 °C, limited by maximum junction temperature 3
Continuous collector current at TC = 100 °C IC 30 A TC = 100 °C, limited by maximum junction temperature 3
Pulsed collector current ICP 120 A Pulse width limited by maximum junction temperature 3
Gate-emitter voltage VGE -20 20 V 3
Continuous forward current at TC = 25 °C IF 60 A TC = 25 °C, limited by maximum junction temperature 3
Continuous forward current at TC = 100 °C IF 30 A TC = 100 °C, limited by maximum junction temperature 3
Pulsed forward current IFP 120 A Pulse width limited by maximum junction temperature 3
Insulation withstand voltage (RMS) from all three leads to external heat sink VISO 2.5 kV t = 1 s, TC = 25 °C 3
Total dissipation PTOT 38 W TC = 25 °C 3
Storage temperature range TSTG -55 150 °C 3
Operating junction temperature range TJ -55 175 °C 3
Thermal resistance junction-case IGBT RthJC 4 °C/W 3
Thermal resistance junction-case diode RthJC 5 °C/W 3
Thermal resistance junction-ambient RthJA 62.5 °C/W 3
Collector-emitter breakdown voltage V(BR)CES 650 V VGE = 0 V, IC = 250 µA 4
Collector-emitter saturation voltage VCE(sat) 1.55 2 V VGE = 15 V, IC = 30 A 4
Collector-emitter saturation voltage VCE(sat) 1.95 V VGE = 15 V, IC = 30 A, TJ = 125 °C 4
Collector-emitter saturation voltage VCE(sat) 2.1 V VGE = 15 V, IC = 30 A, TJ = 175 °C 4
Forward on-voltage VF 1.85 2.65 V IF = 30 A 4
Forward on-voltage VF 1.6 V IF = 30 A, TJ = 125 °C 4
Forward on-voltage VF 1.5 V IF = 30 A, TJ = 175 °C 4
Gate threshold voltage VGE(th) 5 6 7 V VCE = VGE, IC = 500 µA 4
Collector cut-off current ICES 25 µA VGE = 0 V, VCE = 650 V 4
Gate-emitter leakage current IGES -250 250 µA VCE = 0 V, VGE = ±20 V 4
Short-circuit withstand time tsc 6 µs VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 5
Short-circuit withstand time tsc 10 µs VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C 5
Input capacitance Cies 2490 pF VCE = 25 V, f = 1 MHz, VGE = 0 V 4
Output capacitance Coes 143 pF VCE = 25 V, f = 1 MHz, VGE = 0 V 4
Reverse transfer capacitance Cres 46 pF VCE = 25 V, f = 1 MHz, VGE = 0 V 4
Total gate charge Qg 80 nC VCC = 520 V, IC = 30 A, VGE = 0 to 15 V 4
Gate-emitter charge Qge 18 nC 4
Gate-collector charge Qgc 32 nC 4
Turn-on delay time td(on) 31.6 ns VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω 5
Current rise time tr 13.4 ns VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω 5
Turn-on current slope (di/dt)on 1791 A/µs VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω 5
Turn-off-delay time td(off) 115 ns VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω 5
Current fall time tf 110 ns VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω 5
Turn-on switching energy Eon 0.3 mJ VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω 5
Turn-off switching energy Eoff 0.96 mJ VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω 5
Total switching energy Ets 1.26 mJ VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω 5
Turn-on delay time td(on) 30 ns VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 5
Current rise time tr 17 ns VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 5
Turn-on current slope (di/dt)on 1435 A/µs VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 5
Turn-off-delay time td(off) 116 ns VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 5
Current fall time tf 194 ns VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 5
Turn-on switching energy Eon 0.67 mJ VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 5
Turn-off switching energy Eoff 1.36 mJ VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 5
Total switching energy Ets 2.03 mJ VCE = 400 V, IC = 30 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C 5
Reverse recovery time trr 140 ns IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs 5
Reverse recovery charge Qrr 880 nC IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs 5
Reverse recovery current Irrm 17 A IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs 5
Peak rate of fall of reverse recovery current during tb dIrr/dt 650 A/µs IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs 5
Reverse recovery energy Err 115 µJ IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs 5
Reverse recovery time trr 244 ns IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C 5
Reverse recovery charge Qrr 2743 nC IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C 5
Reverse recovery current Irrm 25 A IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C 5
Peak rate of fall of reverse recovery current during tb dIrr/dt 220 A/µs IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C 5
Reverse recovery energy Err 320 µJ IF = 30 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs, TJ = 175 °C 5

CAD (KiCad official)

  • Symbol: STGF30M65DF2
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220FP (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (16 pp, sha256 46a289bc9ad1fc18, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF