component
STGF20H60DF
Public Made by Adomby adom
STMicroelectronics IGBT Transistors / Modules, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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STGF20H60DF
STMicroelectronics · IGBT Transistors / Modules · TO-220FP
STGF20H60DF from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the IGBT; gate-emitter voltage is limited to ±20 V (VGE). |
| 2 | C | passive | Collector of the IGBT; collector-emitter voltage is rated 600 V (VCES) and continuous collector current is 40 A at TC = 25 °C, limited by maximum junction temperature. |
| 3 | E | passive | Emitter of the IGBT; the datasheet gives no pin-specific limit beyond the device absolute maximum ratings (VCES 600 V, VGE ±20 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CES | 600 | V | VGE = 0 V, IC = 2 mA | 3 | ||
| Collector-emitter saturation voltage | VCE(sat) | 1.6 | 2 | V | VGE = 15 V, IC = 20 A | 3 | |
| Gate threshold voltage | VGE(th) | 5 | 6 | 7 | V | VCE = VGE, IC = 1 mA | 3 |
| Collector cut-off current | ICES | 25 | μA | VGE = 0 V, VCE = 600 V | 3 | ||
| Gate-emitter leakage current | IGES | -250 | 250 | nA | VCE = 0 V, VGE = ±20 V | 3 | |
| Short-circuit withstand time | tsc | 3 | 5 | μs | VCC ≤ 360 V, VGE = 15 V, RG = 47 Ω | 4 | |
| Diode forward on-voltage | VF | 1.8 | 2.2 | V | IF = 20 A | 5 | |
| Collector-emitter voltage (VGE = 0 V) | VCES | 600 | V | VGE = 0 V | 2 | ||
| Continuous collector current at TC = 25 °C (TO-220FP) | IC | 40 | A | TC = 25 °C | 2 | ||
| Continuous collector current at TC = 100 °C (TO-220FP) | IC | 20 | A | TC = 100 °C | 2 | ||
| Pulsed collector current (TO-220FP) | ICP | 80 | A | 2 | |||
| Gate-emitter voltage | VGE | -20 | 20 | V | 2 | ||
| Diode RMS forward current at TC = 25 °C (TO-220FP) | IF | 40 | A | TC = 25 °C | 2 | ||
| Diode RMS forward current at TC = 100 °C (TO-220FP) | IF | 20 | A | TC = 100 °C | 2 | ||
| Insulation withstand voltage (RMS) from all three leads to external heat sink | VISO | 2.5 | kV | t = 1 s, TC = 25 °C | 2 | ||
| Pulsed forward current (TO-220FP) | IFP | 80 | A | 2 | |||
| Total power dissipation at TC = 25 °C (TO-220FP) | PTOT | 37 | W | TC = 25 °C | 2 | ||
| Storage temperature range | TSTG | -55 | 150 | °C | 2 | ||
| Operating junction temperature range | TJ | -55 | 175 | °C | 2 | ||
| Thermal resistance, junction-to-case IGBT (TO-220FP) | RthJC | 4 | °C/W | junction-to-case IGBT | 2 | ||
| Thermal resistance, junction-to-case diode (TO-220FP) | RthJC | 5.6 | °C/W | junction-to-case diode | 2 | ||
| Thermal resistance, junction-to-ambient | RthJA | 62.5 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
STGF20H60DF - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220FP (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (22 pp, sha256
39697b0ca0214ad4, retrieved 2026-11-07, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).