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STGF20H60DF

STMicroelectronics · IGBT Transistors / Modules · TO-220FP

STGF20H60DF from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the IGBT; gate-emitter voltage is limited to ±20 V (VGE).
2 C passive Collector of the IGBT; collector-emitter voltage is rated 600 V (VCES) and continuous collector current is 40 A at TC = 25 °C, limited by maximum junction temperature.
3 E passive Emitter of the IGBT; the datasheet gives no pin-specific limit beyond the device absolute maximum ratings (VCES 600 V, VGE ±20 V).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220FP
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter breakdown voltage V(BR)CES 600 V VGE = 0 V, IC = 2 mA 3
Collector-emitter saturation voltage VCE(sat) 1.6 2 V VGE = 15 V, IC = 20 A 3
Gate threshold voltage VGE(th) 5 6 7 V VCE = VGE, IC = 1 mA 3
Collector cut-off current ICES 25 μA VGE = 0 V, VCE = 600 V 3
Gate-emitter leakage current IGES -250 250 nA VCE = 0 V, VGE = ±20 V 3
Short-circuit withstand time tsc 3 5 μs VCC ≤ 360 V, VGE = 15 V, RG = 47 Ω 4
Diode forward on-voltage VF 1.8 2.2 V IF = 20 A 5
Collector-emitter voltage (VGE = 0 V) VCES 600 V VGE = 0 V 2
Continuous collector current at TC = 25 °C (TO-220FP) IC 40 A TC = 25 °C 2
Continuous collector current at TC = 100 °C (TO-220FP) IC 20 A TC = 100 °C 2
Pulsed collector current (TO-220FP) ICP 80 A 2
Gate-emitter voltage VGE -20 20 V 2
Diode RMS forward current at TC = 25 °C (TO-220FP) IF 40 A TC = 25 °C 2
Diode RMS forward current at TC = 100 °C (TO-220FP) IF 20 A TC = 100 °C 2
Insulation withstand voltage (RMS) from all three leads to external heat sink VISO 2.5 kV t = 1 s, TC = 25 °C 2
Pulsed forward current (TO-220FP) IFP 80 A 2
Total power dissipation at TC = 25 °C (TO-220FP) PTOT 37 W TC = 25 °C 2
Storage temperature range TSTG -55 150 °C 2
Operating junction temperature range TJ -55 175 °C 2
Thermal resistance, junction-to-case IGBT (TO-220FP) RthJC 4 °C/W junction-to-case IGBT 2
Thermal resistance, junction-to-case diode (TO-220FP) RthJC 5.6 °C/W junction-to-case diode 2
Thermal resistance, junction-to-ambient RthJA 62.5 °C/W 2

CAD (KiCad official)

  • Symbol: STGF20H60DF
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220FP (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (22 pp, sha256 39697b0ca0214ad4, retrieved 2026-11-07, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF