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stgd6m65df2: factory component page (tier=mfr)

Ray ·f04d40e86f ·2mo ago ·parent 028e5f5
1 file changed +98−8
page.json+98−8
@@ -1,13 +1,108 @@ {+  "schema_version": 1,+  "type": "component",   "slug": "stgd6m65df2",+  "title": "STGD6M65DF2",+  "brief": "STMicroelectronics IGBT Transistors / Modules, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.",   "version": "0.1.0",-  "type": "component",-  "description": "STMicroelectronics IGBT Transistors / Modules, TO-252. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+  "license": "CC-BY-SA-4.0",   "tags": [     "component",     "transistors-thyristors",     "stgd6m65df2"   ],+  "component": {+    "mpn": "STGD6M65DF2",+    "manufacturer": "STMicroelectronics",+    "package": "TO-252",+    "pin_count": 4,+    "category": "Transistors/Thyristors",+    "subcategory": "IGBT Transistors / Modules",+    "datasheet": "https://www.st.com/resource/en/datasheet/stgd6m65df2.pdf",+    "parts": {+      "symbol": "stgd6m65df2.kicad_sym",+      "footprint": "stgd6m65df2.kicad_mod",+      "model_3d": "stgd6m65df2.glb",+      "model_3d_step": "stgd6m65df2.step",+      "lbr": "stgd6m65df2.lbr"+    },+    "distributor_links": {},+    "pins": [+      {+        "number": "1",+        "name": "G",+        "type": "input",+        "description": "Gate. Insulated-gate control terminal of the IGBT. Gate-emitter threshold voltage VGE(th) typ. 6 V (5 V min, 7 V max); absolute max gate-emitter voltage VGE = +/-20 V. Drive typically at VGE = 15 V for full enhancement."+      },+      {+        "number": "2",+        "name": "C",+        "type": "passive",+        "description": "Collector. Also connected to the DPAK TAB (heat-sinking tab). Rated VCES = 650 V, continuous IC = 12 A at TC = 25 degC (6 A at TC = 100 degC), pulsed ICP = 24 A. Anode of the internal antiparallel freewheeling diode is the emitter; cathode is the collector."+      },+      {+        "number": "3",+        "name": "E",+        "type": "passive",+        "description": "Emitter. Power return terminal of the IGBT and anode of the internal antiparallel diode. IF continuous = 12 A at TC = 25 degC (6 A at TC = 100 degC); pulsed IFP = 24 A; VF typ. 2.6 V at IF = 6 A."+      },+      {+        "number": "TAB",+        "name": "C",+        "type": "passive",+        "description": "Metal heat-sink tab, electrically connected to the collector (pin 2). Used for thermal dissipation to the PCB copper pour; RthJC = 1.7 degC/W."+      }+    ],+    "provenance": {+      "extractor": "ds2sf",+      "datasheet": {+        "url": "https://www.st.com/resource/en/datasheet/stgd6m65df2.pdf",+        "pages": 18,+        "sha256": "3456c456d698fc5c",+        "source_tier": "mfr"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 4,+        "described": 4,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    }+  },+  "metadata": {+    "specs": {+      "Manufacturer": "STMicroelectronics",+      "Package": "TO-252",+      "Category": "Transistors/Thyristors",+      "Pins": "4"+    }+  },+  "variants": [+    {+      "mpn": "STGD6M65DF2",+      "kind": "packaging"+    }+  ],+  "sections": [+    "hero",+    "viewers",+    "readme",+    "breadcrumbs",+    "info"+  ],+  "discovery_triggers": [+    "stgd6m65df2"+  ],+  "discovery_pitch": "STGD6M65DF2 (STMicroelectronics) component page with datasheet-verified CAD.",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  },   "dependencies": {},   "hero": {     "type": "image",@@ -25,10 +120,5 @@     "docs/stgd6m65df2-datasheet.pdf",     "viewers/symbol.html",     "viewers/footprint.html"-  ],-  "visibility": "public",-  "author": {-    "name": "Ray",-    "email": "[email protected]"-  }+  ] }\ No newline at end of file