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Contents

README

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STGD18N40LZT4

STMicroelectronics · IGBT Transistors / Modules · DPAK

STGD18N40LZT4 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate input with integrated ESD protection, internal gate resistor RG = 1.6 kΩ, internal gate-emitter resistor RGE = 12-22 kΩ, and gate-emitter voltage clamp VGE(clamped) = 12-16 V.
2 C power_in Collector terminal connected to thermal TAB with 390 V internally clamped voltage (VCES(clamped) = 360-420 V range), rated for 30 A continuous at TC = 100°C and 40 A pulsed collector current.
3 E power_in Emitter terminal providing low-side power return path with emitter-collector reverse break-down voltage V(BR)ECS = 20 V typical, 28 V maximum.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package DPAK
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STGD18N40LZT4
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: stgd18n40lzt4-etched.step / stgd18n40lzt4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgd18n40lzt4.step / stgd18n40lzt4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (16 pp, sha256 2a954e6960962bfd, retrieved 2026-10-01, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF