component

STGB40H65FB

Public Made by Adom

by adom

STMicroelectronics IGBT Transistors / Modules, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstgb40h65fbfactory-2.0.0extractor-text

Verified STGB40H65FB

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: STGB40H65FB · D2PAK · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 15-page datasheet
  • ✓distributor: lcsc C2965367, digikey 497-16977-2-ND, mouser 511-STGB40H65FB
  • ✓family: TO-263-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-_jqytl4g/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ stgb40h65fb.kicad_sym✓ stgb40h65fb.kicad_mod✓ stgb40h65fb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 22h ago
viewers stgb40h65fb: viewers · Ray 22h ago
package.json Publish 0.1.0 · Ray 22h ago
page.json Set visibility: public · Ray 22h ago
README.md Publish 0.1.0 · Ray 22h ago
stgb40h65fb-etched.glb Publish 0.1.0 · Ray 22h ago
stgb40h65fb-etched.step stgb40h65fb: factory component page (tier=mfr) · Ray 22h ago
stgb40h65fb-hero.glb stgb40h65fb: hero GLB from the etched model (keeps the MPN mark) · Ray 22h ago
stgb40h65fb-hero.overlay.json Publish 0.1.0 · Ray 22h ago
stgb40h65fb.glb Publish 0.1.0 · Ray 22h ago
stgb40h65fb.kicad_mod Publish 0.1.0 · Ray 22h ago
stgb40h65fb.kicad_sym Publish 0.1.0 · Ray 22h ago
stgb40h65fb.lbr Publish 0.1.0 · Ray 22h ago
stgb40h65fb.step Publish 0.1.0 · Ray 22h ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 21h ago

STGB40H65FB

STMicroelectronics · IGBT Transistors / Modules · D2PAK

STGB40H65FB from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the IGBT; gate-emitter voltage is limited to ±20 V (VGE) per the absolute maximum ratings.
2 C passive Collector terminal, also connected to the TAB; collector-emitter voltage is rated 650 V (VCES) with VGE = 0 V.
3 E passive Emitter terminal of the IGBT, the reference for the VGE and VCES ratings.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package D2PAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage (VGE = 0 V) VCES 650 V VGE = 0 V 2
Continuous collector current at TC = 25 °C IC 80 A TC = 25 °C 2
Continuous collector current at TC = 100 °C IC 40 A TC = 100 °C 2
Pulsed collector current ICP 160 A Pulse width limited by maximum junction temperature 2
Gate-emitter voltage VGE -20 20 V 2
Total power dissipation at TC = 25 °C PTOT 283 W TC = 25 °C 2
Storage temperature range TSTG -55 150 °C 2
Operating junction temperature range TJ -55 175 °C 2
Collector-emitter breakdown voltage V(BR)CES 650 V VGE = 0 V, IC = 2 mA 3
Collector-emitter saturation voltage VCE(sat) 1.6 2 V VGE = 15 V, IC = 40 A 3
Gate threshold voltage VGE(th) 5 6 7 V VCE = VGE, IC = 1 mA 3
Collector cut-off current ICES 25 µA VGE = 0 V, VCE = 650 V 3
Gate-emitter leakage current IGES -250 250 nA VCE = 0 V, VGE = ±20 V 3
Thermal resistance junction-case RthJC 0.53 °C/W 2
Thermal resistance junction-ambient RthJA 62.5 °C/W 2

CAD (KiCad official)

  • Symbol: STGB40H65FB
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: stgb40h65fb-etched.step / stgb40h65fb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgb40h65fb.step / stgb40h65fb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (15 pp, sha256 81cb47283d5bb62f, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF