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README.md Publish 0.1.0 · Ray 24d ago
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STGB20N45LZAG

STMicroelectronics · IGBT Transistors / Modules · D2PAK

STGB20N45LZAG from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate with ESD gate-emitter protection and an integrated gate-emitter resistor RGE of 11 to 22 kΩ (16 kΩ typ.) plus a gate resistance RG of 120 Ω, with gate-emitter clamped voltage VGE(clamped) of 12 V min and 16 V typ. at IG = ±2 mA.
2 C passive Collector (also connected to the tab, shown as 'C (2 or TAB)' on the datasheet), with collector-emitter clamped voltage VCES(clamped) of 450 V at IC = 2 mA and VGE = 0 V.
3 E passive Emitter, with emitter-collector breakdown voltage V(BR)ECS of 20 V at IC = 75 mA and VGE = 0 V.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package D2PAK
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STGB20N45LZAG
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: stgb20n45lzag-etched.step / stgb20n45lzag-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgb20n45lzag.step / stgb20n45lzag.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (20 pp, sha256 3efb56d74e21c057, retrieved 2026-10-08, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF