component
STF45N65M5
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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STF45N65M5
STMicroelectronics · MOSFETs · TO-220FP
STF45N65M5 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at ±25 V (VGS). |
| 2 | D | passive | Drain terminal of the N-channel MOSFET; continuous drain current is 35 A at TC = 25 °C and drain-source breakdown voltage V(BR)DSS is 650 V minimum. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, the reference for the gate-source voltage (±25 V maximum). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | ID = 1 mA, VGS = 0 V | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 650 V | 3 | ||
| Zero gate voltage drain current at TC = 125 °C | IDSS | 100 | µA | VGS = 0 V, VDS = 650 V, TC = 125 °C (specified by design, not tested in production) | 3 | ||
| Gate body leakage current | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±25 V | 3 | |
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 250 µA | 3 |
| Static drain-source on-resistance | RDS(on) | 67 | 78 | mΩ | VGS = 10 V, ID = 17.5 A | 3 | |
| Source-drain current | ISD | 35 | A | 4 | |||
| Source-drain current (pulsed) | ISDM | 140 | A | 4 | |||
| Forward on voltage | VSD | 1.5 | V | ISD = 35 A, VGS = 0 V | 4 | ||
| Gate-source voltage | VGS | -25 | 25 | V | 2 | ||
| Drain current (continuous) at TC = 25 °C | ID | 35 | A | TC = 25 °C | 2 | ||
| Drain current (continuous) at TC = 100 °C | ID | 22 | A | TC = 100 °C | 2 | ||
| Drain current (pulsed) | IDM | 140 | A | Pulse width limited by safe operating area | 2 | ||
| Total power dissipation (TO-220FP) | PTOT | 40 | W | TC = 25 °C | 2 | ||
| Peak diode recovery voltage slope | dv/dt(2) | 15 | V/ns | ISD ≤ 35 A, di/dt ≤ 400 A/µs; VDS (peak) < V(BR)DSS, VDD = 400 V | 2 | ||
| MOSFET dv/dt ruggedness | dv/dt(3) | 50 | V/ns | VDD ≤ 480 V | 2 | ||
| Insulation withstand voltage (RMS) | VISO | 2.5 | kV | from all three leads to external heat sink, t = 1 s; TC = 25 °C | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Operating junction temperature range | TJ | 150 | °C | 2 | |||
| Avalanche current, repetitive or not-repetitive | IAR | 9 | A | pulse width limited by TJ max. | 2 | ||
| Single pulse avalanche energy | EAS | 810 | mJ | starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 | ||
| Thermal resistance, junction-to-case (TO-220FP) | RthJC | 3.13 | °C/W | 2 | |||
| Thermal resistance, junction-to-ambient (TO-220FP) | RthJA | 62.5 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
STF45N65M5 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220FP (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (20 pp, sha256
a63f6582598e1faa, retrieved 2026-11-07, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).