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STF35N65DM2
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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STF35N65DM2
STMicroelectronics · MOSFETs · TO-220FP
STF35N65DM2 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate-source voltage is limited to ±25 V (Table 2 absolute maximum ratings), and the gate is Zener-protected per the features list. |
| 2 | D | passive | Continuous drain current is rated 32 A at Tcase = 25 °C (20 A at 100 °C), with a pulsed drain current of 90 A and a drain-source breakdown voltage of 650 V. |
| 3 | S | passive | Source is the return terminal, with source-drain diode continuous current rated 32 A and pulsed current rated 90 A (Table 8). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 250 µA | 4 |
| Static drain-source on-resistance | RDS(on) | 0.093 | 0.11 | Ω | VGS = 10 V, ID = 16 A | 4 | |
| Gate-body leakage current | IGSS | -5 | 5 | µA | VDS = 0 V, VGS = ±25 V | 4 | |
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS = 0 V, ID = 1 mA | 4 | ||
| Zero gate voltage drain current at Tcase = 125 °C | IDSS | 100 | µA | VGS = 0 V, VDS = 650 V, Tcase = 125 °C | 4 | ||
| Gate-source voltage | VGS | -25 | 25 | V | 3 | ||
| Drain current (continuous) | ID | 32 | A | Tcase = 25 °C | 3 | ||
| Drain current (continuous) | ID | 20 | A | Tcase = 100 °C | 3 | ||
| Drain current (pulsed) | IDM | 90 | A | Pulse width limited by safe operating area | 3 | ||
| Total dissipation | PTOT | 40 | W | Tcase = 25 °C | 3 | ||
| Peak diode recovery voltage slope | dv/dt | 50 | V/ns | ISD ≤ 32 A, di/dt=900 A/µs, VDD = 80% V(BR)DSS | 3 | ||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS ≤ 520 V | 3 | ||
| Insulation withstand voltage (RMS) | VISO | 2.5 | kV | From all three leads to external heat-sink, t = 1 s; Tc = 25 °C | 3 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 3 | ||
| Thermal resistance junction-case | Rthj-case | 3.1 | °C/W | 3 | |||
| Thermal resistance junction-ambient | Rthj-amb | 62.5 | °C/W | 3 | |||
| Avalanche current, repetitive or non-repetitive | IAR | 4 | A | 3 | |||
| Single pulse avalanche energy | EAS | 1150 | mJ | Starting Tj = 25 °C, ID = IAR, VDD = 50 V | 3 | ||
| Source-drain current | ISD | 32 | A | 5 | |||
| Source-drain current (pulsed) | ISDM | 90 | A | 5 | |||
| Input capacitance | Ciss | 2540 | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 4 | ||
| Output capacitance | Coss | 115 | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 4 | ||
| Reverse transfer capacitance | Crss | 2.5 | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 4 | ||
| Equivalent output capacitance | Coss eq. | 204 | pF | VDS = 0 to 520 V, VGS = 0 V | 4 | ||
| Intrinsic gate resistance | RG | 4.2 | Ω | f = 1 MHz, ID = 0 A | 4 | ||
| Total gate charge | Qg | 56.3 | nC | VDD = 520 V, ID = 32 A, VGS = 0 to 10 V | 4 | ||
| Gate-source charge | Qgs | 12.7 | nC | VDD = 520 V, ID = 32 A, VGS = 0 to 10 V | 4 | ||
| Gate-drain charge | Qgd | 27.6 | nC | VDD = 520 V, ID = 32 A, VGS = 0 to 10 V | 4 | ||
| Turn-on delay time | td(on) | 23.4 | ns | VDD = 325 V, ID = 16 A, RG = 4.7 Ω, VGS = 10 V | 4 | ||
| Rise time | tr | 23 | ns | VDD = 325 V, ID = 16 A, RG = 4.7 Ω, VGS = 10 V | 4 | ||
| Turn-off delay time | td(off) | 72 | ns | VDD = 325 V, ID = 16 A, RG = 4.7 Ω, VGS = 10 V | 4 | ||
| Fall time | tf | 10.4 | ns | VDD = 325 V, ID = 16 A, RG = 4.7 Ω, VGS = 10 V | 4 | ||
| Forward on voltage | VSD | 1.6 | V | VGS = 0 V, ISD = 32 A | 5 | ||
| Reverse recovery time | trr | 100 | ns | ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V | 5 | ||
| Reverse recovery charge | Qrr | 0.42 | µC | ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V | 5 | ||
| Reverse recovery current | IRRM | 8.4 | A | ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V | 5 | ||
| Reverse recovery time | trr | 205 | ns | ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 | ||
| Reverse recovery charge | Qrr | 1.8 | µC | ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 | ||
| Reverse recovery current | IRRM | 17.6 | A | ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 |
CAD (KiCad official)
- Symbol:
STF35N65DM2 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220FP (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (13 pp, sha256
e16d353628ee2161, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).