component
STF35N65DM2
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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page.json+522−26@@ -1,8 +1,11 @@ {+ "schema_version": 1,+ "type": "component", "slug": "stf35n65dm2",+ "title": "STF35N65DM2",+ "brief": "STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "transistors-thyristors",@@ -10,26 +13,6 @@ "factory-2.0.0", "extractor-text" ],- "dependencies": {},- "hero": {- "type": "image",- "path": "docs/hero.png"- },- "files": [- "page.json",- "README.md",- "stf35n65dm2.kicad_sym",- "stf35n65dm2.kicad_mod",- "stf35n65dm2.glb",- "stf35n65dm2.step",- "stf35n65dm2.lbr",- "docs/hero.png",- "docs/stf35n65dm2-datasheet.pdf",- "viewers/symbol.html",- "viewers/footprint.html",- "stf35n65dm2-hero.glb",- "stf35n65dm2-hero.overlay.json"- ], "component": { "mpn": "STF35N65DM2", "manufacturer": "STMicroelectronics",@@ -139,10 +122,523 @@ } ] },- "visibility": "public",- "org": "adom",+ "metadata": {+ "specs": {+ "Manufacturer": "STMicroelectronics",+ "Package": "TO-220FP",+ "Category": "Transistors/Thyristors",+ "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "e16d353628ee2161429108ba44ba48008d0a4fcb8dc7969fab0afdc0b340896b",+ "rows": [+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 3,+ "typ": 4,+ "max": 5,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.093,+ "max": 0.11,+ "conditions": "VGS = 10 V, ID = 16 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -5,+ "typ": null,+ "max": 5,+ "conditions": "VDS = 0 V, VGS = ±25 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 650,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 1 mA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current at Tcase = 125 °C",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 0 V, VDS = 650 V, Tcase = 125 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -25,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 32,+ "conditions": "Tcase = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "Tcase = 100 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 90,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total dissipation",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "Tcase = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "ISD ≤ 32 A, di/dt=900 A/µs, VDD = 80% V(BR)DSS",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "MOSFET dv/dt ruggedness",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VDS ≤ 520 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Insulation withstand voltage (RMS)",+ "symbol": "VISO",+ "kind": "absolute_maximum",+ "unit": "kV",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "From all three leads to external heat-sink, t = 1 s; Tc = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-case",+ "symbol": "Rthj-case",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 3.1,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-ambient",+ "symbol": "Rthj-amb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 62.5,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Avalanche current, repetitive or non-repetitive",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 1150,+ "conditions": "Starting Tj = 25 °C, ID = IAR, VDD = 50 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 32,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 90,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 2540,+ "max": null,+ "conditions": "VDS = 100 V, f = 1 MHz, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 115,+ "max": null,+ "conditions": "VDS = 100 V, f = 1 MHz, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 2.5,+ "max": null,+ "conditions": "VDS = 100 V, f = 1 MHz, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Equivalent output capacitance",+ "symbol": "Coss eq.",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 204,+ "max": null,+ "conditions": "VDS = 0 to 520 V, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Intrinsic gate resistance",+ "symbol": "RG",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 4.2,+ "max": null,+ "conditions": "f = 1 MHz, ID = 0 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 56.3,+ "max": null,+ "conditions": "VDD = 520 V, ID = 32 A, VGS = 0 to 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 12.7,+ "max": null,+ "conditions": "VDD = 520 V, ID = 32 A, VGS = 0 to 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 27.6,+ "max": null,+ "conditions": "VDD = 520 V, ID = 32 A, VGS = 0 to 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 23.4,+ "max": null,+ "conditions": "VDD = 325 V, ID = 16 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 23,+ "max": null,+ "conditions": "VDD = 325 V, ID = 16 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 72,+ "max": null,+ "conditions": "VDD = 325 V, ID = 16 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 10.4,+ "max": null,+ "conditions": "VDD = 325 V, ID = 16 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.6,+ "max": null,+ "conditions": "VGS = 0 V, ISD = 32 A",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 100,+ "max": null,+ "conditions": "ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "µC",+ "min": null,+ "typ": 0.42,+ "max": null,+ "conditions": "ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 8.4,+ "max": null,+ "conditions": "ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 205,+ "max": null,+ "conditions": "ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "µC",+ "min": null,+ "typ": 1.8,+ "max": null,+ "conditions": "ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 17.6,+ "max": null,+ "conditions": "ISD = 32 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C",+ "source_page": 5,+ "source": "datasheet"+ }+ ]+ }+ },+ "variants": [],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "stf35n65dm2"+ ],+ "discovery_pitch": "STF35N65DM2 (STMicroelectronics) component page: datasheet pinout, KiCad symbol, footprint and 3D.", "author": { "name": "Ray", "email": "[email protected]"- }-}+ },+ "dependencies": {},+ "hero": {+ "type": "image",+ "path": "docs/hero.png"+ },+ "files": [+ "page.json",+ "README.md",+ "stf35n65dm2.kicad_sym",+ "stf35n65dm2.kicad_mod",+ "stf35n65dm2.glb",+ "stf35n65dm2.step",+ "stf35n65dm2.lbr",+ "docs/hero.png",+ "docs/stf35n65dm2-datasheet.pdf",+ "viewers/symbol.html",+ "viewers/footprint.html",+ "stf35n65dm2-hero.glb",+ "stf35n65dm2-hero.overlay.json"+ ]+}