# STF16N90K5

**STMicroelectronics** · MOSFETs · TO-220FP

STF16N90K5 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±30 V absolute maximum and the gate is protected by built-in back-to-back Zener diodes with a gate-source breakdown voltage of at least 30 V. |
| 2 | D | passive | Drain terminal; drain-source breakdown voltage V(BR)DSS is 900 V minimum at VGS = 0 V and ID = 1 mA. |
| 3 | S | passive | Source terminal; the continuous source-drain current is rated at 15 A, and the insulation withstand voltage from all three leads to the external heat sink is 2.5 kV RMS. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -30 |  | 30 | V |  | 2 |
| Drain current (continuous) at TC = 25 °C | ID |  |  | 15 | A | TC = 25 °C | 2 |
| Drain current (continuous) at TC = 100 °C | ID |  |  | 9 | A | TC = 100 °C | 2 |
| Drain current (pulsed) | IDM |  |  | 60 | A | Pulse width limited by safe operating area | 2 |
| Total power dissipation | PTOT |  |  | 30 | W | TC = 25 °C | 2 |
| Insulation withstand voltage (RMS) from all three leads to external heat sink | VISO |  |  | 2.5 | kV | t = 1 s; TC = 25 °C | 2 |
| Peak diode recovery voltage slope | dv/dt |  |  | 4.5 | V/ns | ISD ≤ 15 A, di/dt ≤ 100 A/μs; VDS (peak) ≤ V(BR)DSS, VDD = 450 V | 2 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | VDS ≤ 720 V | 2 |
| Operating junction temperature range | TJ | -55 |  | 150 | °C |  | 2 |
| Thermal resistance junction-case | Rthj-case |  | 4.1 |  | °C/W |  | 2 |
| Thermal resistance junction-amb | Rthj-amb |  | 62.5 |  | °C/W |  | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 900 |  |  | V | VGS = 0 V, ID = 1 mA | 3 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VGS = 0 V, VDS = 900 V | 3 |
| Zero gate voltage drain current at TC = 125 °C | IDSS |  |  | 50 | µA | VGS = 0 V, VDS = 900 V, TC = 125 °C | 3 |
| Gate body leakage current | IGSS | -10 |  | 10 | µA | VDS = 0 V, VGS = ±20 V | 3 |
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 100 µA | 3 |
| Static drain-source on-resistance | RDS(on) |  | 280 | 330 | mΩ | VGS = 10 V, ID = 7.5 A | 3 |
| Input capacitance | Ciss |  | 1027 |  | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 3 |
| Output capacitance | Coss |  | 106 |  | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 3 |
| Reverse transfer capacitance | Crss |  | 1.6 |  | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 3 |
| Equivalent capacitance energy related | Co(er) |  | 51 |  | pF | VGS = 0 V, VDS = 0 to 720 V | 3 |
| Equivalent capacitance time related | Co(tr) |  | 141 |  | pF | VGS = 0 V, VDS = 0 to 720 V | 3 |
| Intrinsic gate resistance | Rg | 1 | 4.9 | 9 | Ω | f = 1 MHz, ID = 0 A | 3 |
| Total gate charge | Qg |  | 29.7 |  | nC | VDD = 720 V, ID = 15 A, VGS = 0 to 10 V | 3 |
| Gate-source charge | Qgs |  | 7.3 |  | nC | VDD = 720 V, ID = 15 A, VGS = 0 to 10 V | 3 |
| Gate-drain charge | Qgd |  | 17.7 |  | nC | VDD = 720 V, ID = 15 A, VGS = 0 to 10 V | 3 |
| Turn-on delay time | td(on) |  | 28.8 |  | ns | VDD = 450 V, ID = 7.5 A, RG = 4.7 Ω, VGS = 10 V | 4 |
| Rise time | tr |  | 36 |  | ns | VDD = 450 V, ID = 7.5 A, RG = 4.7 Ω, VGS = 10 V | 4 |
| Turn-off delay time | td(off) |  | 46 |  | ns | VDD = 450 V, ID = 7.5 A, RG = 4.7 Ω, VGS = 10 V | 4 |
| Fall time | tf |  | 9.8 |  | ns | VDD = 450 V, ID = 7.5 A, RG = 4.7 Ω, VGS = 10 V | 4 |
| Source-drain current | ISD |  |  | 15 | A |  | 4 |
| Source-drain current (pulsed) | ISDM |  |  | 60 | A | Pulse width limited by safe operating area | 4 |
| Forward on voltage | VSD |  |  | 1.5 | V | ISD = 15 A, VGS = 0 V; pulsed, pulse duration = 300 µs, duty cycle 1.5% | 4 |
| Reverse recovery time | trr |  | 458 |  | ns | ISD = 15 A, di/dt = 100 A/µs, VDD = 60 V | 4 |
| Reverse recovery charge | Qrr |  | 8.13 |  | µC | ISD = 15 A, di/dt = 100 A/µs, VDD = 60 V | 4 |
| Reverse recovery current | IRRM |  | 35.5 |  | A | ISD = 15 A, di/dt = 100 A/µs, VDD = 60 V | 4 |
| Reverse recovery time at Tj = 150 °C | trr |  | 546 |  | ns | ISD = 15 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 4 |
| Reverse recovery charge at Tj = 150 °C | Qrr |  | 9.2 |  | µC | ISD = 15 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 4 |
| Reverse recovery current at Tj = 150 °C | IRRM |  | 33.7 |  | A | ISD = 15 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 4 |
| Gate-source breakdown voltage | V(BR)GSO | 30 |  |  | V | IGS = ±1 mA, ID = 0 A | 4 |

## CAD (KiCad official)

- Symbol: `STF16N90K5`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220FP (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stf16n90k5.pdf) (12 pp, sha256 `bb756a9be04316a4`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `off` (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stf16n90k5-datasheet.pdf)