component
STF13N65M2
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 4h ago |
| viewers | 4h ago |
| package.json | 4h ago |
| page.json | 4h ago |
| README.md | 4h ago |
| stf13n65m2-hero.glb | 4h ago |
| stf13n65m2-hero.overlay.json | 4h ago |
| stf13n65m2.glb | 4h ago |
| stf13n65m2.kicad_mod | 4h ago |
| stf13n65m2.kicad_sym | 4h ago |
| stf13n65m2.lbr | 4h ago |
| stf13n65m2.step | 4h ago |
STF13N65M2
STMicroelectronics · MOSFETs · TO-220FP
STF13N65M2 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is limited to ±25 V (Table 1). |
| 2 | D | passive | Drain terminal; continuous drain current is 10 A at TC = 25 °C and drain-source breakdown voltage is 650 V minimum (Tables 1 and 4). |
| 3 | S | passive | Source terminal; source-drain diode current is 10 A continuous and 40 A pulsed (Table 7). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 650 | V | VGS= 0 V, ID = 1 mA | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 650 V | 3 | ||
| Zero gate voltage drain current at TC = 125 °C | IDSS | 100 | µA | VGS = 0 V, VDS = 650 V, TC = 125 °C | 3 | ||
| Gate-body leakage current | IGSS | -10 | 10 | µA | VDS = 0 V, VGS = ±25 V | 3 | |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250 µA | 3 |
| Static drain-source on-resistance | RDS(on) | 370 | 430 | mΩ | VGS = 10 V, ID = 5 A | 3 | |
| Gate-source voltage | VGS | -25 | 25 | V | 2 | ||
| Drain current (continuous) at TC = 25 °C | ID | 10 | A | TC = 25 °C | 2 | ||
| Drain current (continuous) at TC = 100 °C | ID | 6.3 | A | TC = 100 °C | 2 | ||
| Drain current (pulsed) | IDM | 40 | A | Pulse width is limited by safe operating area | 2 | ||
| Total power dissipation | PTOT | 25 | W | TC = 25 °C | 2 | ||
| Insulation withstand voltage (RMS) | VISO | 2.5 | kV | from all three leads to external heat sink, t = 1 s; TC = 25 °C | 2 | ||
| Peak diode recovery voltage slope | dv/dt | 15 | V/ns | 2 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | 2 | |||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Thermal resistance, junction-to-case | RthJC | 5 | °C/W | 2 | |||
| Thermal resistance, junction-to-ambient | RthJA | 62.5 | °C/W | 2 | |||
| Avalanche current, repetitive or non-repetitive | IAR | 1.8 | A | pulse width limited by TJ max. | 2 | ||
| Single pulse avalanche energy | EAS | 350 | mJ | starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 |
CAD (KiCad official)
- Symbol:
STF13N65M2 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220FP (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (11 pp, sha256
64e51a560aea096f, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).