# STF11N60DM2

**STMicroelectronics** · MOSFETs · TO-220FP

STF11N60DM2 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET; the gate-source voltage is rated at ±25 V and the gate is Zener-protected. |
| 2 | D | passive | Drain terminal of the MOSFET; the drain-source breakdown voltage is 600 V minimum at VGS = 0 V, ID = 1 mA and continuous drain current is 10 A at Tcase = 25 °C. |
| 3 | S | passive | Source terminal of the MOSFET; the source-drain diode continuous current is limited to 10 A and the pulsed current to 40 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -25 |  | 25 | V |  | 2 |
| Drain current (continuous) | ID |  |  | 10 | A | Tcase = 25 °C | 2 |
| Drain current (continuous) | ID |  |  | 6.3 | A | Tcase = 100 °C | 2 |
| Drain current (pulsed) | IDM |  |  | 40 | A |  | 2 |
| Total power dissipation | PTOT |  |  | 25 | W | Tcase = 25 °C | 2 |
| Peak diode recovery voltage slope | dv/dt(2) |  |  | 50 | V/ns | ISD ≤ 10 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V | 2 |
| MOSFET dv/dt ruggedness | dv/dt(3) |  |  | 50 | V/ns | VDS ≤ 480 V | 2 |
| Insulation withstand voltage (RMS) | VISO |  |  | 2.5 | kV | from all three leads to external heat sink; t = 1 s; TC = 25 °C | 2 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 2 |
| Thermal resistance junction-case | Rthj-case |  |  | 5 | °C/W |  | 2 |
| Thermal resistance junction-ambient | Rthj-amb |  |  | 62.5 | °C/W |  | 2 |
| Avalanche current, repetitive or not repetitive | IAR |  |  | 2.5 | A | pulse width limited by Tjmax | 2 |
| Single pulse avalanche energy | EAS |  |  | 250 | mJ | starting Tj = 25 °C, ID = IAR, VDD = 50 V | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 600 |  |  | V | VGS = 0 V, ID = 1 mA | 3 |
| Zero gate voltage drain current | IDSS |  |  | 1.5 | µA | VGS = 0 V, VDS = 600 V | 3 |
| Zero gate voltage drain current | IDSS |  |  | 100 | µA | VGS = 0 V, VDS = 600 V, Tcase = 125 °C | 3 |
| Gate-body leakage current | IGSS | -5 |  | 5 | µA | VDS = 0 V, VGS = ±25 V | 3 |
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 250 µA | 3 |
| Static drain-source on-resistance | RDS(on) |  | 370 | 420 | mΩ | VGS = 10 V, ID = 5 A | 3 |
| Source-drain current | ISD |  |  | 10 | A |  | 4 |
| Source-drain current (pulsed) | ISDM |  |  | 40 | A |  | 4 |
| Forward on voltage | VSD |  | 1.6 |  | V | VGS = 0 V, ISD = 10 A | 4 |
| Gate-source breakdown voltage | V(BR)GSO | -30 |  | 30 | V | IGS = ±250 µA, ID = 0 A | 4 |

## CAD (KiCad official)

- Symbol: `STF11N60DM2`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220FP (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stf11n60dm2.pdf) (12 pp, sha256 `bf6379c4df6d1ff8`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stf11n60dm2-datasheet.pdf)