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STF100N10F7

STMicroelectronics · MOSFETs · TO-220FP

STF100N10F7 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with gate-source voltage limited to ±20 V (VGS, Table 1).
2 D passive Drain of the N-channel MOSFET, rated for 100 V drain-source voltage and 45 A continuous drain current at TC = 25 °C on the TO-220FP variant (Table 1).
3 S passive Source of the N-channel MOSFET; the datasheet gives no source-specific limit beyond the device ratings in Table 1.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220FP
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 100 V ID = 250 μA, VGS = 0 V 3
Zero gate voltage drain current IDSS 1 µA VDS = 100 V, VGS = 0 V 3
Zero gate voltage drain current at TC = 125 °C IDSS 100 µA VDS = 100 V, VGS = 0 V, TC = 125 °C 3
Gate-body leakage current IGSS 100 nA VGS = 20 V, VDS = 0 V 3
Gate threshold voltage VGS(th) 2.5 4.5 V VDS = VGS, ID = 250 μA 3
Static drain-source on-resistance RDS(on) 6.8 8 mΩ VGS = 10 V, ID = 40 A; VGS = 10 V, ID = 22.5 A 3
Source-drain current ISD 80 A 4
Source-drain current (pulsed) ISDM 320 A Pulse width limited by safe operating area 4
Forward on voltage VSD 1.2 V ISD = 80 A, VGS = 0 V 4
Drain-source voltage VDS 100 V 2
Gate-source voltage VGS -20 20 V 2
Drain current (continuous) ID 45 A TC = 25 °C; limited by package 2
Drain current (continuous) ID 32 A TC = 100 °C; limited by package 2
Drain current (pulsed) IDM 180 A Pulse width limited by safe operating area 2
Total power dissipation PTOT 30 W TC = 25 °C; limited by package 2
Insulation withstand voltage (RMS) from all three leads to external heatsink VISO 2.5 kV t = 1 s, TC = 25 °C 2
Operating junction temperature TJ -55 175 °C 2
Thermal resistance, junction-to-case (TO-220FP) RthJC 5 °C/W 2
Thermal resistance, junction-to-ambient RthJA 62.5 °C/W 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing Abs Updated title and features on the cover page, Table 1: Device summary, Table 2: Absolute maximum ratings, Table 3: Thermal resistance and Table 5: On/off 28

CAD (KiCad official)

  • Symbol: STF100N10F7
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220FP (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (30 pp, sha256 a9b511a6619d7014, retrieved 2026-11-07, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF