component
STF100N10F7
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220FP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
STF100N10F7
STMicroelectronics · MOSFETs · TO-220FP
STF100N10F7 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with gate-source voltage limited to ±20 V (VGS, Table 1). |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for 100 V drain-source voltage and 45 A continuous drain current at TC = 25 °C on the TO-220FP variant (Table 1). |
| 3 | S | passive | Source of the N-channel MOSFET; the datasheet gives no source-specific limit beyond the device ratings in Table 1. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | ID = 250 μA, VGS = 0 V | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS = 100 V, VGS = 0 V | 3 | ||
| Zero gate voltage drain current at TC = 125 °C | IDSS | 100 | µA | VDS = 100 V, VGS = 0 V, TC = 125 °C | 3 | ||
| Gate-body leakage current | IGSS | 100 | nA | VGS = 20 V, VDS = 0 V | 3 | ||
| Gate threshold voltage | VGS(th) | 2.5 | 4.5 | V | VDS = VGS, ID = 250 μA | 3 | |
| Static drain-source on-resistance | RDS(on) | 6.8 | 8 | mΩ | VGS = 10 V, ID = 40 A; VGS = 10 V, ID = 22.5 A | 3 | |
| Source-drain current | ISD | 80 | A | 4 | |||
| Source-drain current (pulsed) | ISDM | 320 | A | Pulse width limited by safe operating area | 4 | ||
| Forward on voltage | VSD | 1.2 | V | ISD = 80 A, VGS = 0 V | 4 | ||
| Drain-source voltage | VDS | 100 | V | 2 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 2 | ||
| Drain current (continuous) | ID | 45 | A | TC = 25 °C; limited by package | 2 | ||
| Drain current (continuous) | ID | 32 | A | TC = 100 °C; limited by package | 2 | ||
| Drain current (pulsed) | IDM | 180 | A | Pulse width limited by safe operating area | 2 | ||
| Total power dissipation | PTOT | 30 | W | TC = 25 °C; limited by package | 2 | ||
| Insulation withstand voltage (RMS) from all three leads to external heatsink | VISO | 2.5 | kV | t = 1 s, TC = 25 °C | 2 | ||
| Operating junction temperature | TJ | -55 | 175 | °C | 2 | ||
| Thermal resistance, junction-to-case (TO-220FP) | RthJC | 5 | °C/W | 2 | |||
| Thermal resistance, junction-to-ambient | RthJA | 62.5 | °C/W | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | Abs | Updated title and features on the cover page, Table 1: Device summary, Table 2: Absolute maximum ratings, Table 3: Thermal resistance and Table 5: On/off | 28 |
CAD (KiCad official)
- Symbol:
STF100N10F7 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220FP (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (30 pp, sha256
a9b511a6619d7014, retrieved 2026-11-07, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STF100N10F7
**STMicroelectronics** · MOSFETs · TO-220FP
STF100N10F7 from STMicroelectronics, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with gate-source voltage limited to ±20 V (VGS, Table 1). |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for 100 V drain-source voltage and 45 A continuous drain current at TC = 25 °C on the TO-220FP variant (Table 1). |
| 3 | S | passive | Source of the N-channel MOSFET; the datasheet gives no source-specific limit beyond the device ratings in Table 1. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220FP |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 100 | | | V | ID = 250 μA, VGS = 0 V | 3 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS = 100 V, VGS = 0 V | 3 |
| Zero gate voltage drain current at TC = 125 °C | IDSS | | | 100 | µA | VDS = 100 V, VGS = 0 V, TC = 125 °C | 3 |
| Gate-body leakage current | IGSS | | | 100 | nA | VGS = 20 V, VDS = 0 V | 3 |
| Gate threshold voltage | VGS(th) | 2.5 | | 4.5 | V | VDS = VGS, ID = 250 μA | 3 |
| Static drain-source on-resistance | RDS(on) | | 6.8 | 8 | mΩ | VGS = 10 V, ID = 40 A; VGS = 10 V, ID = 22.5 A | 3 |
| Source-drain current | ISD | | | 80 | A | | 4 |
| Source-drain current (pulsed) | ISDM | | | 320 | A | Pulse width limited by safe operating area | 4 |
| Forward on voltage | VSD | | | 1.2 | V | ISD = 80 A, VGS = 0 V | 4 |
| Drain-source voltage | VDS | | | 100 | V | | 2 |
| Gate-source voltage | VGS | -20 | | 20 | V | | 2 |
| Drain current (continuous) | ID | | | 45 | A | TC = 25 °C; limited by package | 2 |
| Drain current (continuous) | ID | | | 32 | A | TC = 100 °C; limited by package | 2 |
| Drain current (pulsed) | IDM | | | 180 | A | Pulse width limited by safe operating area | 2 |
| Total power dissipation | PTOT | | | 30 | W | TC = 25 °C; limited by package | 2 |
| Insulation withstand voltage (RMS) from all three leads to external heatsink | VISO | | | 2.5 | kV | t = 1 s, TC = 25 °C | 2 |
| Operating junction temperature | TJ | -55 | | 175 | °C | | 2 |
| Thermal resistance, junction-to-case (TO-220FP) | RthJC | | 5 | | °C/W | | 2 |
| Thermal resistance, junction-to-ambient | RthJA | | 62.5 | | °C/W | | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | Abs | | Updated title and features on the cover page, Table 1: Device summary, Table 2: Absolute maximum ratings, Table 3: Thermal resistance and Table 5: On/off | 28 |
## CAD (KiCad official)
- Symbol: `STF100N10F7`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220FP (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stf100n10f7.pdf) (30 pp, sha256 `a9b511a6619d7014`, retrieved 2026-11-07, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/stf100n10f7-datasheet.pdf)