component
STD9N65M2
Public Made by Adomby adom
STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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std9n65m2: specified limits as data (metadata.characteristics, 23 rows from the datasheet)
2 files changed
+314−1
README.md+30@@ -21,6 +21,36 @@ STD9N65M2 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extrac | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-source voltage | VGS | -25 | | 25 | V | | 2 |+| Drain current (continuous) at TC = 25 °C | ID | | | 5 | A | TC = 25 °C | 2 |+| Drain current (continuous) at TC = 100 °C | ID | | | 3.2 | A | TC = 100 °C | 2 |+| Drain current (pulsed) | IDM | | | 20 | A | | 2 |+| Total power dissipation at TC = 25 °C | PTOT | | | 60 | W | TC = 25 °C | 2 |+| Peak diode recovery voltage slope | dv/dt(3) | | | 15 | V/ns | ISD ≤ 5 A, di/dt = 400 A/μs; VDS(peak) < V(BR)DSS, VDD = 400 V | 2 |+| MOSFET dv/dt ruggedness | dv/dt(4) | | | 50 | V/ns | VDS ≤ 520 V | 2 |+| Storage temperature range | Tstg | -55 | | 150 | °C | | 2 |+| Operating junction temperature range | TJ | -55 | | 150 | °C | | 2 |+| Avalanche current, repetitive or not repetitive | IAR | | | 1 | A | pulse width limited by TJ max | 2 |+| Single pulse avalanche energy | EAS | | | 105 | mJ | starting TJ = 25 °C, ID = IAR; VDD = 50 V | 2 |+| Thermal resistance junction-case | Rthj-case | | | 2.08 | °C/W | DPAK | 2 |+| Thermal resistance junction-pcb | Rthj-pcb | | | 50 | °C/W | | 2 |+| Thermal resistance junction-ambient | Rthj-amb | | | 62.5 | °C/W | When mounted on 1 inch2 FR-4, 2 Oz copper board | 2 |+| Drain-source breakdown voltage | V(BR)DSS | 650 | | | V | VGS = 0 V, ID = 1 mA | 3 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 650 V | 3 |+| Zero gate voltage drain current | IDSS | | | 100 | µA | VGS = 0 V, VDS = 650 V, TC = 125 °C | 3 |+| Gate-body leakage current | IGSS | -10 | | 10 | µA | VDS = 0 V, VGS = ±25 V | 3 |+| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250 µA | 3 |+| Static drain-source on-resistance | RDS(on) | | 0.79 | 0.9 | Ω | VGS = 10 V, ID = 2.5 A | 3 |+| Source-drain current | ISD | | | 5 | A | | 4 |+| Source-drain current (pulsed) | ISDM | | | 20 | A | | 4 |+| Forward on voltage | VSD | | | 1.6 | V | ISD = 5 A, VGS = 0 V | 4 |+ ## CAD (KiCad official) - Symbol: `STD9N65M2`
page.json+284−1@@ -150,6 +150,289 @@ "Package": "DPAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "a66a6196d685cbf0",+ "rows": [+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -25,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous) at TC = 25 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous) at TC = 100 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 3.2,+ "conditions": "TC = 100 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation at TC = 25 °C",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt(3)",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "ISD ≤ 5 A, di/dt = 400 A/μs; VDS(peak) < V(BR)DSS, VDD = 400 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "MOSFET dv/dt ruggedness",+ "symbol": "dv/dt(4)",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VDS ≤ 520 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche current, repetitive or not repetitive",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "pulse width limited by TJ max",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 105,+ "conditions": "starting TJ = 25 °C, ID = IAR; VDD = 50 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-case",+ "symbol": "Rthj-case",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 2.08,+ "conditions": "DPAK",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-pcb",+ "symbol": "Rthj-pcb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-ambient",+ "symbol": "Rthj-amb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62.5,+ "conditions": "When mounted on 1 inch2 FR-4, 2 Oz copper board",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 650,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 1 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 650 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 0 V, VDS = 650 V, TC = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 0 V, VGS = ±25 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": 3,+ "max": 4,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.79,+ "max": 0.9,+ "conditions": "VGS = 10 V, ID = 2.5 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "ISD = 5 A, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +474,4 @@ "visibility": { "public": true }-}+}