# STD8N60DM2

**STMicroelectronics** · MOSFETs · DPAK

STD8N60DM2 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET, with gate-source voltage limited to ±25 V and Zener protection on the gate. |
| 2 | D | passive | Drain terminal, also electrically connected to the TAB; continuous drain current is 8 A at TC = 25 °C with VDS rated at 600 V. |
| 3 | S | passive | Source terminal; source-drain diode continuous current is 8 A and pulsed current is 32 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -25 |  | 25 | V |  | 2 |
| Drain current (continuous) | ID |  |  | 8 | A | TC = 25 °C | 2 |
| Drain current (continuous) | ID |  |  | 5 | A | TC = 100 °C | 2 |
| Drain current (pulsed) | IDM |  |  | 32 | A | Pulse width limited by safe operating area | 2 |
| Total power dissipation | PTOT |  |  | 85 | W | TC = 25 °C | 2 |
| Peak diode recovery voltage slope | dv/dt(2) |  |  | 50 | V/ns | ISD ≤ 8 A, di/dt = 900 A/µs, VDD = 400 V | 2 |
| MOSFET dv/dt ruggedness | dv/dt(3) |  |  | 50 | V/ns | VDS ≤ 480 V | 2 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 2 |
| Thermal resistance, junction-to-case | RthJC |  |  | 1.47 | °C/W |  | 2 |
| Thermal resistance, junction-to-ambient | RthJA |  |  | 50 | °C/W | Mounted on a 1-inch² FR-4, 2 Oz copper board | 2 |
| Avalanche current, repetitive or not repetitive | IAR |  |  | 2.5 | A | Pulse width limited by Tjmax | 2 |
| Single pulse avalanche energy | EAS |  |  | 430 | mJ | Starting Tj = 25 °C, ID = IAR, VDD = 50 V | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 600 |  |  | V | VGS = 0 V, ID = 1 mA | 3 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VGS = 0 V, VDS = 600 V | 3 |
| Zero gate voltage drain current (TC = 125 °C) | IDSS |  |  | 100 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C(1) | 3 |
| Gate-body leakage current | IGSS | -5 |  | 5 | µA | VDS = 0 V, VGS = ±25 V | 3 |
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 250 µA | 3 |
| Static drain-source on-resistance | RDS(on) |  | 550 | 600 | mΩ | VGS = 10 V, ID = 4 A | 3 |
| Source-drain current | ISD |  |  | 8 | A |  | 4 |
| Source-drain current (pulsed) | ISDM |  |  | 32 | A |  | 4 |
| Forward on voltage | VSD |  |  | 1.6 | V | VGS = 0 V, ISD = 8 A | 4 |
| Reverse recovery time | trr |  |  | 80 | ns | ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V | 4 |
| Reverse recovery charge | Qrr |  |  | 188 | nC | ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V | 4 |
| Reverse recovery current | IRRM |  |  | 4.7 | A | ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V | 4 |
| Reverse recovery time (Tj = 150 °C) | trr |  |  | 160 | ns | ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 4 |
| Reverse recovery charge (Tj = 150 °C) | Qrr |  |  | 640 | nC | ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 4 |
| Reverse recovery current (Tj = 150 °C) | IRRM |  |  | 8 | A | ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 4 |

## CAD (KiCad official)

- Symbol: `STD8N60DM2`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files: `std8n60dm2-etched.step` / `std8n60dm2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `std8n60dm2.step` / `std8n60dm2.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/std8n60dm2.pdf) (19 pp, sha256 `f4ee411e23dda890`, retrieved 2026-11-05, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/std8n60dm2-datasheet.pdf)