component

STD6NF10-HXY

Public Made by Adom

by adom

HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorstd6nf10-hxyfactory-2.0.0extractor-text

Verified STD6NF10-HXY

by Ray · last 2 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

2 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: STD6NF10-HXY · TO-252-2L · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-jk2e7m68/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ std6nf10-hxy.kicad_sym✓ std6nf10-hxy.kicad_mod✓ std6nf10-hxy.step
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Contents

README

markdown

STD6NF10-HXY

HXY MOSFET · MOSFETs · TO-252-2L

STD6NF10-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with gate-source voltage rated ±20 V per the absolute maximum ratings.
2 D passive Drain of the N-channel MOSFET, rated for 100 V drain-source voltage and 15 A continuous drain current at TC=25℃.
3 S passive Source of the N-channel MOSFET, serving as the return path for drain current and the reference for gate-source voltage.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current at TC=25℃ ID@TC=25℃ 15 A 1
Continuous Drain Current at TC=100℃ ID@TC=100℃ 7.7 A VGS @ 10V 1
Pulsed Drain Current IDM 24 A 1
Single Pulse Avalanche Energy EAS 6.1 mJ 1
Avalanche Current IAS 11 A 1
Total Power Dissipation at TC=25℃ PD@TC=25℃ 34.7 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 62 ℃/W 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V , ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 100 112 mΩ VGS=10V , ID=10A 2
Static Drain-Source On-Resistance RDS(ON) 117 130 mΩ VGS=4.5V , ID=8A 2
Gate Threshold Voltage VGS(th) 1 2.5 V VGS=VDS , ID =250uA 2
Drain-Source Leakage Current at TJ=25℃ IDSS 1 uA VDS=80V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current at TJ=55℃ IDSS 5 uA VDS=80V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS 12 A VG=VD=0V , Force Current 2
Pulsed Source Current ISM 24 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V , IS=1A , TJ=25℃ 2
BVDSS Temperature Coefficient △BVDSS/△TJ 0.098 V/℃ Reference to 25℃ , ID=1mA 2
VGS(th) Temperature Coefficient △VGS(th)/△TJ -4.57 mV/℃ 2

CAD (KiCad official)

  • Symbol: STD6NF10-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: std6nf10-hxy-etched.step / std6nf10-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); std6nf10-hxy.step / std6nf10-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 14ff031c2928c947, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF