component
STD65N55F3
Public Made by Adomby adom
STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
std65n55f3: specified limits as data (metadata.characteristics, 20 rows from the datasheet)
2 files changed
+275−1
README.md+27@@ -21,6 +21,33 @@ STD65N55F3 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extra | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 55 | V | | 2 |+| Gate-source voltage | VGS | -20 | | 20 | V | | 2 |+| Drain current (continuous) | ID | | | 80 | A | TC = 25 °C | 2 |+| Drain current (continuous) | ID | | | 56 | A | TC = 100 °C | 2 |+| Drain current (pulsed) | IDM | | | 320 | A | Pulse width limited by safe operating area | 2 |+| Total power dissipation | PTOT | | | 110 | W | TC = 25 °C | 2 |+| Peak diode recovery | dv/dt | | | 11 | V/ns | ISD ≤ 65A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ Tjmax | 2 |+| Single pulse avalanche energy | EAS | | | 390 | mJ | Starting Tj = 25°C, ID = 32 A, VDD = 25 V | 2 |+| Operating junction temperature range | Tj | -55 | | 175 | °C | | 2 |+| Thermal resistance junction-case | Rthj-case | | 1.36 | | °C/W | | 2 |+| Thermal resistance junction-pcb | Rthj-pcb | | 50 | | °C/W | Mounted on an 1- inch² FR-4 board, 2oz Cu | 2 |+| Drain-source breakdown voltage | V(BR)DSS | 55 | | | V | VGS = 0 V, ID = 250 µA | 3 |+| Zero gate voltage drain current | IDSS | | | 10 | µA | VGS = 0 V, VDS = 55 V | 3 |+| Zero gate voltage drain current | IDSS | | | 100 | µA | VGS = 0 V, VDS = 55 V, TC = 125 °C | 3 |+| Gate-body leakage current | IGSS | -200 | | 200 | nA | VGS = ±20 V, VDS = 0 V | 3 |+| Gate threshold voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250 µA | 3 |+| Static drain-source on-resistance | RDS(on) | | 6.5 | 8.5 | mΩ | VGS = 10 V, ID = 32 A | 3 |+| Total gate charge | Qg | | 33.5 | 45 | nC | VDD = 27 V, ID = 65 A, VGS = 0 to 10 V | 3 |+| Source-drain current | ISD | | | 80 | A | | 4 |+| Source-drain current (pulsed) | ISDM | | | 320 | A | Pulsed: pulse duration = 300 μs, duty cycle 1.5% | 4 |+ ## CAD (KiCad official) - Symbol: `STD65N55F3`
page.json+248−1@@ -150,6 +150,253 @@ "Package": "DPAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "4d52fdbad0cfe733",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 55,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 56,+ "conditions": "TC = 100 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 320,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 11,+ "conditions": "ISD ≤ 65A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ Tjmax",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 390,+ "conditions": "Starting Tj = 25°C, ID = 32 A, VDD = 25 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-case",+ "symbol": "Rthj-case",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 1.36,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-pcb",+ "symbol": "Rthj-pcb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 50,+ "max": null,+ "conditions": "Mounted on an 1- inch² FR-4 board, 2oz Cu",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 55,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VGS = 0 V, VDS = 55 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 0 V, VDS = 55 V, TC = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -200,+ "typ": null,+ "max": 200,+ "conditions": "VGS = ±20 V, VDS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": null,+ "max": 4,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 6.5,+ "max": 8.5,+ "conditions": "VGS = 10 V, ID = 32 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 33.5,+ "max": 45,+ "conditions": "VDD = 27 V, ID = 65 A, VGS = 0 to 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 320,+ "conditions": "Pulsed: pulse duration = 300 μs, duty cycle 1.5%",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +438,4 @@ "visibility": { "public": true }-}+}